公开(公告)号：JPS62106632A

公开(公告)日：1987-05-18

申请号：JP21990286

申请日：1986-09-19

Applicant: IBM

Inventor： CLODGO DONNA J ,  PREVITI-KELLY ROSEMARY A ,  WALTON ERICK G

IPC: B32B27/00 ,  C08G77/38 ,  C08J5/18 ,  C09D183/04 ,  H01L21/312

公开(公告)号：CA1223089A

公开(公告)日：1987-06-16

申请号：CA495660

申请日：1985-11-19

Applicant: IBM

Inventor： CLODGO DONNA J ,  PREVITI-KELLY ROSEMARY A ,  WALTON ERICK G

IPC: H01L21/3205 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H05K3/14 ,  H01L21/28

Abstract: A lift-off metal deposition process in which a high temperature polyimide layer (i.e. a polyimide having a high imidization temperature) is applied to a first polyimide layer. The two layers are anisotropically etched through a photoresist mask to form vias in the first polyimide layer. After application of a metal layer, the high-temperature polyimide layer is lifted off the first polyimide layer, which remains as a passivation layer.