公开(公告)号：JP2001308100A

公开(公告)日：2001-11-02

申请号：JP2001077127

申请日：2001-03-16

Applicant: IBM

Inventor： ELLIS-MONAGHAN JOHN J ,  FEENEY PAUL M ,  ROBERT M JEFFKEN ,  LANDIS HOWARD S ,  PREVITI-KELLY ROSEMARY A ,  BERGMAN-REUTER BETTE L ,  RUTTEN MATTHEW J ,  STAMPER ANTHONY K ,  YANKEE SALLY J

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/31 ,  H01L23/485 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide means for making an ultra-low k dielectric material which is compatible with a C4/wire bond structure. SOLUTION: The manufacturing method and structure of a semiconductor chip comprises a plurality of interconnecting metallization layers, at least one deformable dielectric material layer covering the interconnecting metallization layers, at least one I/O bonding pad, and a support structure including a fairly rigid dielectric in supporting relation with the pads and avoiding crushing of the deformable dielectric material layer.

公开(公告)号：JPS62106632A

公开(公告)日：1987-05-18

申请号：JP21990286

申请日：1986-09-19

Applicant: IBM

Inventor： CLODGO DONNA J ,  PREVITI-KELLY ROSEMARY A ,  WALTON ERICK G

IPC: B32B27/00 ,  C08G77/38 ,  C08J5/18 ,  C09D183/04 ,  H01L21/312

公开(公告)号：CA2051174C

公开(公告)日：1994-05-31

申请号：CA2051174

申请日：1991-09-11

Applicant: IBM

Inventor： LINDE HAROLD G ,  PREVITI-KELLY ROSEMARY A

IPC: C08G73/10 ,  B32B15/08 ,  B32B15/088 ,  B32B37/00 ,  C08J5/12 ,  C09D183/04 ,  C09D183/08 ,  H01L21/312 ,  H05K1/03 ,  H05K3/38 ,  H05K3/46 ,  B32B27/06 ,  H01L23/29 ,  H01L21/469

Abstract: In order to improve the adhesion of a polyimide layer to an underlying metal surface, an organic solution which cures to a silsesquioxane copolymer is applied to the surface. The polyimide and the copolymer are formed during a simultaneous curing step.

公开(公告)号：DE69118119D1

公开(公告)日：1996-04-25

申请号：DE69118119

申请日：1991-09-27

Applicant: IBM

Inventor： LINDE HAROLD G ,  PREVITI-KELLY ROSEMARY A

IPC: C08G73/10 ,  B32B15/08 ,  B32B15/088 ,  B32B37/00 ,  C08J5/12 ,  C09D183/04 ,  C09D183/08 ,  H01L21/312 ,  H05K1/03 ,  H05K3/38 ,  H05K3/46

Abstract: In order to improve the adhesion of a polyimide layer to an underlying metal surface, an organic solution which cures to a silsesquioxane copolymer is applied to the surface. The polyimide and the copolymer are formed during a simultaneous curing step.

公开(公告)号：MY117703A

公开(公告)日：2004-07-31

申请号：MYPI20010672

申请日：2001-02-14

Applicant: IBM

Inventor： ELLIS-MONAGHAN JOHN J ,  FEENEY PAUL M ,  GEFFKEN ROBERT M ,  LANDIS HOWARD S ,  PREVITI-KELLY ROSEMARY A ,  REUTER BETTE BERGMAN L ,  RUTTEN MATTHEW J ,  STAMPER ANTHONY K ,  YANKEE SALLY J

IPC: H01L23/52 ,  H01L23/58 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/31 ,  H01L23/485 ,  H01L23/532

Abstract: A METHOD AND STRUCTURE FOR A SEMICONDUCTOR CHIP INCLUDES A PLURALITY OF LAYERS OF INTERCONNECT METALLURGY, AT LEAST ONE LAYER OF DEFORMABLE DIELECTRIC MATERIAL OVER THE INTERCONNECT METALLURGY, AT LEAST ONE INPUT/OUTPUT BONDING PAD, AND A SUPPORT STRUCTURE THAT INCLUDES A SUBSTANTIALLY RIGID DIELECTRIC IN A SUPPORTING RELATIONSHIP TO THE PAD THAT AVOIDS CRUSHING THE DEFORMABLE DIELECTRIC MATERIAL.

公开(公告)号：DE10110566A1

公开(公告)日：2001-09-27

申请号：DE10110566

申请日：2001-03-06

Applicant: IBM

Inventor： ELLIS-MONAGHAN JOHN J ,  FEENEY PAUL M ,  GEFFKEN ROBERT M ,  LANDIS HOWARD S ,  PREVITI-KELLY ROSEMARY A ,  BERGMAN-REUTER BETTE L ,  RUTTEN MATTHEW J ,  STAMPER ANTHONY K ,  YANKEE SALLY J

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/31 ,  H01L23/485 ,  H01L23/532 ,  H01L23/50 ,  H01L21/314

Abstract: Over the coupling metallising is deposited at least one film of deformable dielectric material. A support structure, contg. rigid dielectric, is connected to the deformable dielectric and to an input-output bond island.The support structure also supports the bond island to prevent the fracture of the deformable dielectric material. Typically the support structure contains a cap over the deformable dielectric material, coplanar with the structured last metallising layer. Independent claims are included for integrated circuit chip and for mfr. of semiconductor chip.

公开(公告)号：DE69031460T2

公开(公告)日：1998-03-26

申请号：DE69031460

申请日：1990-10-05

Applicant: IBM

Inventor： LINDE HAROLD G ,  PREVITI-KELLY ROSEMARY A

IPC: C09D183/08 ,  C09D183/00 ,  H01L21/312

Abstract: An improved insulating layer is formed by applying to a suitable substrate an organic solution, prepared by reacting a aminoalkoxysilane monomer, an arylalkoxysilane or arylsilazane monomer and water in a solvent, and then heating the coated substrate under conditions so as to evaporate the solvent and form a layer of cured ladder-type silsesquioxane copolymer. The insulating layer, which demonstrates excellent planarizing and thermal stability characteristics, in particularly useful in semiconductor device applications.

公开(公告)号：DE69118119T2

公开(公告)日：1996-10-02

申请号：DE69118119

申请日：1991-09-27

Applicant: IBM

Inventor： LINDE HAROLD G ,  PREVITI-KELLY ROSEMARY A

IPC: C08G73/10 ,  B32B15/08 ,  B32B15/088 ,  B32B37/00 ,  C08J5/12 ,  C09D183/04 ,  C09D183/08 ,  H01L21/312 ,  H05K1/03 ,  H05K3/38 ,  H05K3/46

Abstract: In order to improve the adhesion of a polyimide layer to an underlying metal surface, an organic solution which cures to a silsesquioxane copolymer is applied to the surface. The polyimide and the copolymer are formed during a simultaneous curing step.

公开(公告)号：CA1223089A

公开(公告)日：1987-06-16

申请号：CA495660

申请日：1985-11-19

Applicant: IBM

Inventor： CLODGO DONNA J ,  PREVITI-KELLY ROSEMARY A ,  WALTON ERICK G

IPC: H01L21/3205 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H05K3/14 ,  H01L21/28

Abstract: A lift-off metal deposition process in which a high temperature polyimide layer (i.e. a polyimide having a high imidization temperature) is applied to a first polyimide layer. The two layers are anisotropically etched through a photoresist mask to form vias in the first polyimide layer. After application of a metal layer, the high-temperature polyimide layer is lifted off the first polyimide layer, which remains as a passivation layer.

公开(公告)号：DE10110566B4

公开(公告)日：2007-03-01

申请号：DE10110566

申请日：2001-03-06

Applicant: IBM

Inventor： ELLIS-MONAGHAN JOHN J ,  FEENEY PAUL M ,  GEFFKEN ROBERT M ,  LANDIS HOWARD S ,  PREVITI-KELLY ROSEMARY A ,  BERGMAN-REUTER BETTE L ,  RUTTEN MATTHEW J ,  STAMPER ANTHONY K ,  YANKEE SALLY J

IPC: H01L23/50 ,  H01L23/52 ,  H01L21/312 ,  H01L21/314 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/31 ,  H01L23/485 ,  H01L23/532

Abstract: A method and structure for a semiconductor chip includes a plurality of layers of interconnect metallurgy, at least one layer of deformable dielectric material over the interconnect metallurgy, at least one input/output bonding pad, and a support structure that includes a substantially rigid dielectric in a supporting relationship to the pad that avoids crushing the deformable dielectric material.