公开(公告)号：DE69420004T2

公开(公告)日：2000-03-30

申请号：DE69420004

申请日：1994-10-06

Applicant: IBM

Inventor： CABRAL CYRIL ,  CLEVENGER LAWRENCE ALFRED ,  D HEURLE FRANCOIS MAX ,  HARPER JAMES MCKELL EDWIN ,  MANN RANDY WILLIAM ,  MILES GLEN LESTER ,  RAKOWSKI DONALD WALTER DOUGLAS

IPC: C23C20/02 ,  C30B1/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  C30B1/00

Abstract: The phase transformation temperature of a metal silicide layer formed overlying a silicon layer on a semiconductor wafer is lowered. First, a refractory metal is disposed proximate to the surface of the silicon layer, a precursory metal is deposited in a layer overlying the refractory metal, and the wafer is heated to a temperature sufficient to form the metal silicide from the precursory metal. The precursory metal may be a refractory metal, and is preferably titanium, tungsten, or cobalt. The concentration of the refractory metal at the surface of the silicon layer is preferably less than about 10 atoms/cm . The refractory metal may be Mo, Co, W, Ta, Nb, Ru, or Cr, and more preferably is Mo or Co. The heating step used to form the silicide is performed at a temperature less than about 700 DEG C, and more preferably between about 600-700 DEG C. Optionally, the wafer is annealed following the step of disposing the refractory metal and prior to the step of depositing the precursory metal layer. Preferably, this annealing step is performed at a wafer temperature of at least about 900 DEG C.

公开(公告)号：DE69420004D1

公开(公告)日：1999-09-16

申请号：DE69420004

申请日：1994-10-06

Applicant: IBM

Inventor： CABRAL CYRIL ,  CLEVENGER LAWRENCE ALFRED ,  D HEURLE FRANCOIS MAX ,  HARPER JAMES MCKELL EDWIN ,  MANN RANDY WILLIAM ,  MILES GLEN LESTER ,  RAKOWSKI DONALD WALTER DOUGLAS

IPC: C23C20/02 ,  C30B1/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  C30B1/00

Abstract: The phase transformation temperature of a metal silicide layer formed overlying a silicon layer on a semiconductor wafer is lowered. First, a refractory metal is disposed proximate to the surface of the silicon layer, a precursory metal is deposited in a layer overlying the refractory metal, and the wafer is heated to a temperature sufficient to form the metal silicide from the precursory metal. The precursory metal may be a refractory metal, and is preferably titanium, tungsten, or cobalt. The concentration of the refractory metal at the surface of the silicon layer is preferably less than about 10 atoms/cm . The refractory metal may be Mo, Co, W, Ta, Nb, Ru, or Cr, and more preferably is Mo or Co. The heating step used to form the silicide is performed at a temperature less than about 700 DEG C, and more preferably between about 600-700 DEG C. Optionally, the wafer is annealed following the step of disposing the refractory metal and prior to the step of depositing the precursory metal layer. Preferably, this annealing step is performed at a wafer temperature of at least about 900 DEG C.

公开(公告)号：ES2136148T3

公开(公告)日：1999-11-16

申请号：ES94115744

申请日：1994-10-06

Applicant: IBM

Inventor： CABRAL CYRIL JR ,  CLEVENGER LAWRENCE ALFRED ,  D HEURLE FRANCOIS MAX ,  HARPER JAMES MCKELL EDWIN ,  MANN RANDY WILLIAM ,  MILES GLEN LESTER

IPC: C23C20/02 ,  C30B1/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  C30B1/00

Abstract: The phase transformation temperature of a metal silicide layer formed overlying a silicon layer on a semiconductor wafer is lowered. First, a refractory metal is disposed proximate to the surface of the silicon layer, a precursory metal is deposited in a layer overlying the refractory metal, and the wafer is heated to a temperature sufficient to form the metal silicide from the precursory metal. The precursory metal may be a refractory metal, and is preferably titanium, tungsten, or cobalt. The concentration of the refractory metal at the surface of the silicon layer is preferably less than about 10 atoms/cm . The refractory metal may be Mo, Co, W, Ta, Nb, Ru, or Cr, and more preferably is Mo or Co. The heating step used to form the silicide is performed at a temperature less than about 700 DEG C, and more preferably between about 600-700 DEG C. Optionally, the wafer is annealed following the step of disposing the refractory metal and prior to the step of depositing the precursory metal layer. Preferably, this annealing step is performed at a wafer temperature of at least about 900 DEG C.

公开(公告)号：AT183251T

公开(公告)日：1999-08-15

申请号：AT94115744

申请日：1994-10-06

Applicant: IBM

Inventor： CABRAL CYRIL JR ,  CLEVENGER LAWRENCE ALFRED ,  D HEURLE FRANCOIS MAX ,  HARPER JAMES MCKELL EDWIN ,  MANN RANDY WILLIAM ,  MILES GLEN LESTER ,  RAKOWSKI DONALD WALTER DOUGLAS

IPC: C23C20/02 ,  C30B1/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  C30B1/00

Abstract: The phase transformation temperature of a metal silicide layer formed overlying a silicon layer on a semiconductor wafer is lowered. First, a refractory metal is disposed proximate to the surface of the silicon layer, a precursory metal is deposited in a layer overlying the refractory metal, and the wafer is heated to a temperature sufficient to form the metal silicide from the precursory metal. The precursory metal may be a refractory metal, and is preferably titanium, tungsten, or cobalt. The concentration of the refractory metal at the surface of the silicon layer is preferably less than about 10 atoms/cm . The refractory metal may be Mo, Co, W, Ta, Nb, Ru, or Cr, and more preferably is Mo or Co. The heating step used to form the silicide is performed at a temperature less than about 700 DEG C, and more preferably between about 600-700 DEG C. Optionally, the wafer is annealed following the step of disposing the refractory metal and prior to the step of depositing the precursory metal layer. Preferably, this annealing step is performed at a wafer temperature of at least about 900 DEG C.

公开(公告)号：DE2325555A1

公开(公告)日：1973-12-20

申请号：DE2325555

申请日：1973-05-19

Applicant: IBM

Inventor： D HEURLE FRANCOIS MAX ,  RUTZ RICHARD FREDERICK

IPC: G11C11/41 ,  G11C11/39 ,  H01L21/318 ,  H01L45/00 ,  H03K3/027 ,  G11C11/34

Abstract: 1416644 Non-volatile memory devices INTERNATIONAL BUSINESS MACHINE CORP 15 March 1973 [5 June 1972] 12472/73 Heading H1K A multi-state switch with non-volatile memory comprises a substrate of a refractory metal, e.g. tungsten, molybdenum, niobium or tantalum, a film of aluminium nitride formed thereon by sputtering after outgassing the substrate for at least 10 minutes at 350- 1500‹ C. at a pressure of from 2 Î 10 -7 to 2 Î 10 -8 Torr and an electrode on the film. Typically when using a 111 orientated mono- or polycrystalline tungsten or molybdenum substrate a series of presputtering steps in argon or nitrogen is performed prior to reactively sputtering aluminium in pure nitrogen at 1100‹ C. to form a film 0À2-10 Á thick. The film is electroded by alloying P- or N-type silicon to it at 1420-1800‹ C., or aluminium-silicon at above 576‹ C., or by sputtering, evaporating, or alloying on aluminium at 660-1800‹ C. A forming voltage of either polarity is then applied to realisethe switching characteristic. Switching from a high to a low impedance condition occurs above a threshold voltage with the electrode positive and reversion takes place when a threshold current of opposite polarity is exceeded. The ratio high/low impedance may be as high as 10,000 : 1 at very low switching frequencies but falls to about 20 : 1 at 100 kc./s. At a given frequency the values of the high and low impedances and the switching thresholds are determined by the amplitude of the voltages applied but switching is substantially independent of temperature in the range 4-500‹ K. The device finds use as a computer memory element,' high speed pulse or harmonic generator or electrically resettable circuit breaker.