Abstract:
PROBLEM TO BE SOLVED: To enhance thermal conductivity by bonding a semiconductor chip and a heat sink through composite solder containing lead tin solder and one thermal conductivity filling material. SOLUTION: An SOI structure 23 is formed on a silicon substrate 21 and silicon/dielectric/interconnection 25 is formed thereon. A chromium bonding layer 29 is then formed on the silicon substrate 21 on the side opposite to the SOI structure 23 and a nickel or nickel containing layer 31 is formed on the chromium layer 29. Subsequently, a gold layer 33 is formed on the nickel layer 31 and a composite solder layer 35 is provided thereon. The silicon substrate 21 is connected with a copper or tungsten heat sink 37 through solder and bonded to a connection 27 and the rear metallization of the semiconductor chip through the composite solder 35. It is employed in an electronic package including a high performance microprocessor chip and functions as a useful composite solder containing lead tin solder and a thermal conductivity filling material.
Abstract:
PROBLEM TO BE SOLVED: To provide a barrier film for a semiconductor element structure. SOLUTION: A barrier film comprises a compound, including nitrogen as well as at least titanium or tantalum, nitrogen of a variable concentration in the barrier film, and oxygen of a variable concentration in the barrier film.
Abstract:
PROBLEM TO BE SOLVED: To prevent the electrochemical melting of a metal induced by the exposure of a semiconductor to light during a chemical mechanical polishing, by preventing a PN junction from being exposed to light generating a photoelectric effect. SOLUTION: A PN junction 300 contains an n-type semiconductor material 320 and a p-type semiconductor materail 310 which are arranged in parallel, and shows a photoelectric effect under a certain condition. The photoelectric effect substantailly transforms the PN junction 300 to a cell supplying a current to metal connections 330, 340. The application of the photons of light 350 having sufficient energy to the PN junction 300 generates the photoelectric effect and a current source similar to a cell and an electrochemical melting by a photoelectric voltage. Therefore, the electrochemical melting is reduced by preventing the PN junction from being exposed to light generating the photoelectric effect. COPYRIGHT: (C)1999,JPO
Abstract:
PROBLEM TO BE SOLVED: To enable plating second metal on first metal without using a mask, by forming a recessed part in an insulating layer, exposing a part of a first metal feature, and forming a conducting barrier layer and a plated shield layer in order on the insulating layer and the exposed part of the first metal feature. SOLUTION: A part of light metal 3 is exposed by forming a recessed part. A conducting barrier layer 11 is arranged on an insulating layer. After the conducting barrier layer 11 is stuck, a shield layer 13 is stuck on the conducting barrier layer 11 containing the wall surface and the bottom surface of the recessed part. After the shield layer 13 is formed, photoresist is stuck on the shield layer 13. A part 15 of a resist layer which is left in the recessed part and protects the shield layer 13 in the recessed part is eliminated. After the resist is eliminated, lead-tin or other conductive metal 17 is subjected to electroplating on a part of the shield layer 13 left in the recessed part. As a result, second metal can be directly plated on first metal without using a mask.
Abstract:
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