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    STRUCTURE AND PROCESS FOR DISSIPATING HEAT IN HIGH PERFORMANCE CHIP
    1.
    发明专利
    STRUCTURE AND PROCESS FOR DISSIPATING HEAT IN HIGH PERFORMANCE CHIP 失效

    公开(公告)号：JP2001085584A

    公开(公告)日：2001-03-30

    申请号：JP2000251872

    申请日：2000-08-23

    Applicant: IBM

    Inventor： UZOH CYPRIAN E ,  DANIEL C EDELSTEIN

    IPC: H01L23/40 ,  H01L23/34 ,  H01L23/36 ,  H01L23/373

    Abstract: PROBLEM TO BE SOLVED: To enhance thermal conductivity by bonding a semiconductor chip and a heat sink through composite solder containing lead tin solder and one thermal conductivity filling material. SOLUTION: An SOI structure 23 is formed on a silicon substrate 21 and silicon/dielectric/interconnection 25 is formed thereon. A chromium bonding layer 29 is then formed on the silicon substrate 21 on the side opposite to the SOI structure 23 and a nickel or nickel containing layer 31 is formed on the chromium layer 29. Subsequently, a gold layer 33 is formed on the nickel layer 31 and a composite solder layer 35 is provided thereon. The silicon substrate 21 is connected with a copper or tungsten heat sink 37 through solder and bonded to a connection 27 and the rear metallization of the semiconductor chip through the composite solder 35. It is employed in an electronic package including a high performance microprocessor chip and functions as a useful composite solder containing lead tin solder and a thermal conductivity filling material.

    Method of preventing electrochemical melting induced by light in chemical mechanical polishing
    3.
    发明专利
    Method of preventing electrochemical melting induced by light in chemical mechanical polishing 有权
    在化学机械抛光中防止光诱导电化学熔融的方法

    公开(公告)号：JPH11274114A

    公开(公告)日：1999-10-08

    申请号：JP2363999

    申请日：1999-02-01

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレイション

    Inventor： DANIEL C EDELSTEIN ,  WILMA J HORKANS ,  STEVEN E RUTH ,  NAPHTALI LUSTIG ,  POPE KEITH R ,  PETER D ROPER

    IPC: H01L21/304 ,  B24B37/34 ,  B24B49/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/321

    CPC classification number: B24B37/34 ,  B24B49/12 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/67028

    Abstract: PROBLEM TO BE SOLVED: To prevent the electrochemical melting of a metal induced by the exposure of a semiconductor to light during a chemical mechanical polishing, by preventing a PN junction from being exposed to light generating a photoelectric effect.
    SOLUTION: A PN junction 300 contains an n-type semiconductor material 320 and a p-type semiconductor materail 310 which are arranged in parallel, and shows a photoelectric effect under a certain condition. The photoelectric effect substantailly transforms the PN junction 300 to a cell supplying a current to metal connections 330, 340. The application of the photons of light 350 having sufficient energy to the PN junction 300 generates the photoelectric effect and a current source similar to a cell and an electrochemical melting by a photoelectric voltage. Therefore, the electrochemical melting is reduced by preventing the PN junction from being exposed to light generating the photoelectric effect.
    COPYRIGHT: (C)1999,JPO

    Abstract translation: 要解决的问题：通过防止PN结暴露于产生光电效应的光，防止在化学机械抛光期间由半导体暴露于光引起的金属的电化学熔融。 解决方案：PN结300包含平行布置的n型半导体材料320和p型半导体材料310，并且在一定条件下显示光电效应。 光电效应将PN结300适当地转换为向金属连接330,340提供电流的电池。将具有足够能量的光350的光子施加到PN结300产生类似于电池的光电效应和电流源 并通过光电电压进行电化学熔化。 因此，通过防止PN结暴露于产生光电效应的光而降低电化学熔融。

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