公开(公告)号：JPH0677245A

公开(公告)日：1994-03-18

申请号：JP15181593

申请日：1993-06-23

Applicant: IBM

Inventor： DEEBUITSUDO KATORAA AARUGUREN ,  JIYATSUKU ON CHIYUU ,  MAATEIN REBUITSUTSU ,  POORU ANDORIYUU RONSUHAIMU ,  MEARII JIYOOZEFU SATSUKAMANGO ,  DEEBUITSUDO AREN SANDAARANDO

IPC: H01L29/165 ,  H01L21/331 ,  H01L29/73 ,  H01L29/737

Abstract: PURPOSE: To reduce emitter/base leakage and capacitance by providing a layer which includes an emitter/base hetero-junction, having a predetermined concentration profile made of at least one band-gap determining material and which has a specified transistor structure. CONSTITUTION: A base aperture 17 is formed at a position between an isolation trench 11 and an N reach-through region 14. Next, a P SiGe blanket layer 18 to be an intrinsic base and a non-doped Si layer 19 to be an emitter are formed. It is preferred that the P SiGe blanket layer 18 doped at a high concentration be made extremely thin, with a thickness of approximately 30 nm in the base aperture 17. It is also preferable that the P SiGe blanket layer 18 and the non-doped Si layer 19 be formed by a single low-temperature epitaxy method, with the concentration of a dopant and an alloy material being varied. Therefore, these layers can be considered as a single layer. Thus, emitter/base leakage and capacitance can be reduced.