公开(公告)号：DE2727557A1

公开(公告)日：1978-01-12

申请号：DE2727557

申请日：1977-06-18

Applicant: IBM

Inventor： DEINES JOHN LOUIS ,  KU SAN-MEI ,  POPONIAK MICHAEL ROBERT ,  TSANG PAUL JA-MIN

IPC: C30B25/02 ,  C30B29/36 ,  H01L21/04 ,  H01L21/205 ,  H01L21/762 ,  H01L29/267 ,  H01L21/18

Abstract: A method for forming monocrystalline silicon carbide on a silicon substrate by converting a portion of the monocrystalline silicon substrate into a porous silicon substance by anodic treatment carried out in an aqueous solution of hydrofluoric acid, heating the resultant substrate to a temperature in the range of 1050 DEG C to 1250 DEG C in an atmosphere that includes a hydrocarbon gas for a time sufficient to react the porous silicon and the gas, thereby forming a layer of monocrystalline silicon carbide on the silicon substrate.

公开(公告)号：DE2707372A1

公开(公告)日：1977-09-22

申请号：DE2707372

申请日：1977-02-21

Applicant: IBM

Inventor： DEINES JOHN LOUIS ,  POPONIAK MICHAEL ROBERT ,  SCHWENKER ROBERT OTTO

IPC: H01L21/66 ,  G01N27/00 ,  G01R31/26 ,  H01L21/306 ,  C25F3/12