公开(公告)号：DE2544736A1

公开(公告)日：1976-06-10

申请号：DE2544736

申请日：1975-10-07

Applicant: IBM

Inventor： POPONIAK MICHAEL ROBERT

IPC: H01L21/306 ,  H01L21/316 ,  H01L21/322 ,  H01L21/225

公开(公告)号：DE2521568A1

公开(公告)日：1976-01-02

申请号：DE2521568

申请日：1975-05-15

Applicant: IBM

Inventor： POGGE HANS BERNHARD ,  POPONIAK MICHAEL ROBERT

IPC: H01L27/00 ,  C25F3/12 ,  H01L21/00 ,  H01L21/306 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762

公开(公告)号：DE2728985A1

公开(公告)日：1978-01-05

申请号：DE2728985

申请日：1977-06-28

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH ,  DAS GOBINDA ,  POPONIAK MICHAEL ROBERT ,  YEH TSU-HSING

IPC: H01L29/73 ,  H01L21/265 ,  H01L21/28 ,  H01L21/322 ,  H01L21/331 ,  H01L29/32

Abstract: A method for fabricating bipolar semiconductor devices of large scale integration in which the formation of pipes, which result in shorts or leakages between two conductivity types of the semiconductor devices, is minimized. Prior to forming the emitters in the bipolar transistors, nucleation sites for crystallographic defects such as dislocation loops are formed in the base region near its surface. The emitters are then formed in base regions containing the nucleation sites and the sites are converted into electrically harmless dislocation loops during diffusion of the emitter impurity. Preferably, the nucleation sites are formed by implanting non-doping impurities, such as helium, neon, argon, krypton, xenon, silicon, and oxygen.

公开(公告)号：DE2707372A1

公开(公告)日：1977-09-22

申请号：DE2707372

申请日：1977-02-21

Applicant: IBM

Inventor： DEINES JOHN LOUIS ,  POPONIAK MICHAEL ROBERT ,  SCHWENKER ROBERT OTTO

IPC: H01L21/66 ,  G01N27/00 ,  G01R31/26 ,  H01L21/306 ,  C25F3/12

公开(公告)号：DE2330515A1

公开(公告)日：1974-01-31

申请号：DE2330515

申请日：1973-06-15

Applicant: IBM

Inventor： KEENAN WILLIAM ANDREW ,  POPONIAK MICHAEL ROBERT ,  YEH TSU-HSING

IPC: H01L21/66 ,  G01N21/95 ,  G01R31/265 ,  G01R31/26

Abstract: An apparatus for detecting the presence of inclusions in semiconductor material having a polychromatic light source, a support for a semiconductor body, a light sensing means positioned to operate on light transmitted through the body from the light source, the sensing means including a substrate of the same type of semiconductor materials as the material of the semiconductor body, and having at least a PN junction in the substrate with means to backbias the junction, a means to indicate the relative amounts of light transmitted through the semiconductor body that is sensed by the sensing means.

公开(公告)号：DE3070813D1

公开(公告)日：1985-08-01

申请号：DE3070813

申请日：1980-10-15

Applicant: IBM

Inventor： HORNG CHENG TZONG ,  POPONIAK MICHAEL ROBERT ,  RUPPRECHT HANS STEPHAN ,  SCHWENKER ROBERT OTTO

IPC: H01L21/76 ,  H01L21/331 ,  H01L21/74 ,  H01L21/762 ,  H01L29/08 ,  H01L29/10 ,  H01L29/73 ,  H01L29/732 ,  H01L29/72 ,  H01L29/62 ,  H01L21/82

Abstract: A method for device fabrication disclosed is a self-aligned process. The device formed has small vertical as well as horizontal dimensions. The device region is surrounded by a deep oxide trench which has nearly vertical sidewalls. The deep trench extends from the epitaxial silicon surface through N+ subcollector region into the P substrate. The width of the deep trench is about 2 mu m to 3.0 mu m. A shallow oxide trench extending from the epitaxial silicon surface to the upper portion of the N+ subcollector separates the base and collector contact. The surface of the isolation regions and the silicon where the transistor is formed is coplanar. As shown in FIG. 1, the fabricated bipolar transistor has a mesa-type structure. The transistor base dimension is only slightly larger than the emitter. This small base area results in low collector-base capacitance which is a very important parameter in ultra-high performance integrated circuit devices. Contact to the transistor base in the disclosed structure is achieved by a thick heavily boron doped polysilicon layer which surrounds the emitter and makes lateral contact to the active base.

公开(公告)号：DE2729249A1

公开(公告)日：1978-02-09

申请号：DE2729249

申请日：1977-06-29

Applicant: IBM

Inventor： BURKHARDT PAUL JOHANNES ,  POPONIAK MICHAEL ROBERT

IPC: G01N27/00 ,  G01N27/12 ,  G01N27/414 ,  H01L29/66 ,  H01L27/04

公开(公告)号：DE2727557A1

公开(公告)日：1978-01-12

申请号：DE2727557

申请日：1977-06-18

Applicant: IBM

Inventor： DEINES JOHN LOUIS ,  KU SAN-MEI ,  POPONIAK MICHAEL ROBERT ,  TSANG PAUL JA-MIN

IPC: C30B25/02 ,  C30B29/36 ,  H01L21/04 ,  H01L21/205 ,  H01L21/762 ,  H01L29/267 ,  H01L21/18

Abstract: A method for forming monocrystalline silicon carbide on a silicon substrate by converting a portion of the monocrystalline silicon substrate into a porous silicon substance by anodic treatment carried out in an aqueous solution of hydrofluoric acid, heating the resultant substrate to a temperature in the range of 1050 DEG C to 1250 DEG C in an atmosphere that includes a hydrocarbon gas for a time sufficient to react the porous silicon and the gas, thereby forming a layer of monocrystalline silicon carbide on the silicon substrate.

公开(公告)号：DE2642206A1

公开(公告)日：1977-06-23

申请号：DE2642206

申请日：1976-09-20

Applicant: IBM

Inventor： POPONIAK MICHAEL ROBERT ,  YEH TSU-HSING

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/48 ,  H01L21/76 ,  H01L29/32 ,  H01L29/78 ,  H01L21/72 ,  H01L27/04

公开(公告)号：DE3476492D1

公开(公告)日：1989-03-02

申请号：DE3476492

申请日：1984-08-23

Applicant: IBM

Inventor： GAIND ARUN KUMAR ,  KULKARNI SUBHASH BALKRISHNA ,  POPONIAK MICHAEL ROBERT

IPC: H01L21/205 ,  H01L21/22 ,  H01L21/74 ,  H01L21/34

Abstract: A reduced pressure epitaxial deposition method is disclosed to maximize performance and leakage limited yield of devices formed in the epitaxial layer. The method includes specified prebake and deposition conditions designed to minimize arsenic (buried subcollector) and boron (buried isolation) autodoping effects when pressures below one atmosphere are selected in accordance with the subcollector-to-isolation area ratio.