公开(公告)号：IL296249A

公开(公告)日：2022-11-01

申请号：IL29624922

申请日：2022-09-06

Applicant: IBM ,  ARVIND KUMAR ,  TAKASHI ANDO ,  DIRK PFEIFFER

Inventor： ARVIND KUMAR ,  TAKASHI ANDO ,  DIRK PFEIFFER

IPC: G06F21/73 ,  G06F21/75 ,  G06F21/78 ,  G11C13/00 ,  G11C29/44 ,  G11C29/50

Abstract: A technique relates to biasing, using a control system, a crossbar array of resistive processing units (RPUs) under a midrange condition, the midrange condition causing resistances of the RPUs to result in a random output of low values and high values in about equal proportions. The control system reinforces the low values and the high values of the random output by setting the resistances of the RPUs to a state that forces the low values and the high values having resulted from the midrange condition. Reinforcing the low values and the high values makes the random output permanent even when the crossbar array of the RPUs is not biased under the midrange condition. The control system records a sequence of the low values and the high values of the random output responsive to reinforcing the low values and the high values of the random output.

公开(公告)号：GB2610344B

公开(公告)日：2025-01-15

申请号：GB202217559

申请日：2021-03-19

Applicant: IBM

Inventor： ARVIND KUMAR ,  TASASHI ANDO ,  DIRK PFEIFFER

IPC: G11C13/00 ,  G06F21/73 ,  G11C8/20 ,  H04L9/32

Abstract: A technique relates to biasing, using a control system, a crossbar array of resistive processing units (RPUs) under a midrange condition, the midrange condition causing resistances of the RPUs to result in a random output of low values and high values in about equal proportions. The control system reinforces the low values and the high values of the random output by setting the resistances of the RPUs to a state that forces the low values and the high values having resulted from the midrange condition. Reinforcing the low values and the high values makes the random output permanent even when the crossbar array of the RPUs is not biased under the midrange condition. The control system records a sequence of the low values and the high values of the random output responsive to reinforcing the low values and the high values of the random output.

公开(公告)号：IL296249B1

公开(公告)日：2025-04-01

申请号：IL29624922

申请日：2022-09-06

Applicant: IBM ,  ARVIND KUMAR ,  TAKASHI ANDO ,  DIRK PFEIFFER

Inventor： ARVIND KUMAR ,  TAKASHI ANDO ,  DIRK PFEIFFER

IPC: G06F21/73 ,  G06F21/75 ,  G06F21/78 ,  G11C13/00 ,  G11C29/44 ,  G11C29/50

Abstract: A technique relates to biasing, using a control system, a crossbar array of resistive processing units (RPUs) under a midrange condition, the midrange condition causing resistances of the RPUs to result in a random output of low values and high values in about equal proportions. The control system reinforces the low values and the high values of the random output by setting the resistances of the RPUs to a state that forces the low values and the high values having resulted from the midrange condition. Reinforcing the low values and the high values makes the random output permanent even when the crossbar array of the RPUs is not biased under the midrange condition. The control system records a sequence of the low values and the high values of the random output responsive to reinforcing the low values and the high values of the random output.

公开(公告)号：GB2519461B

公开(公告)日：2016-08-10

申请号：GB201501966

申请日：2013-08-08

Applicant: IBM

Inventor： JOHN BRULEY ,  VIJAY NARAYANAN ,  DIRK PFEIFFER ,  JEAN-OLIVER PLOUCHART ,  PEILIN SONG

IPC: H01L23/58 ,  H01L21/66 ,  H04L9/08

Abstract: The present disclosure relates to a secure device having a physical unclonable function and methods of manufacturing such a secure device. The device includes a substrate and at least one high-k/metal gate device formed on the substrate. The at least one high-k/metal gate device represents the physical unclonable function. In some cases, the at least one high-k/metal gate device may be subjected a variability enhancement. In some cases, the secure device may include a measurement circuit for measuring a property of the at least one high-k/metal gate device.