公开(公告)号：SE384761B

公开(公告)日：1976-05-17

申请号：SE7314793

申请日：1973-10-31

Applicant: IBM

Inventor： BARILE C A ,  DOCKERTY R C ,  NAGARAJAN A

IPC: H01L21/28 ,  H01L29/78 ,  H01L21/283 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L29/00 ,  H01L29/51

Abstract: Large threshold voltage shifts of silicon gate FET devices having a composite nitride-oxide gate dielectric are greatly reduced by subjecting the nitride to a dry oxygen annealing at temperatures between 970 DEG -1,150 DEG C prior to depositing the silicon gate electrode. Annealing at 1,050 DEG C applied for a duration of one-half to one hour produces excellent results.

公开(公告)号：BE805959A

公开(公告)日：1974-02-01

申请号：BE136586

申请日：1973-10-11

Applicant: IBM

Inventor： BARILE C A ,  DOCKERTY R C ,  NAGARAJAN A

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/283 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L29/00 ,  H01L29/51 ,  H01L

Abstract: Large threshold voltage shifts of silicon gate FET devices having a composite nitride-oxide gate dielectric are greatly reduced by subjecting the nitride to a dry oxygen annealing at temperatures between 970 DEG -1,150 DEG C prior to depositing the silicon gate electrode. Annealing at 1,050 DEG C applied for a duration of one-half to one hour produces excellent results.