公开(公告)号：BE851929A

公开(公告)日：1977-06-16

申请号：BE175352

申请日：1977-02-28

Applicant: IBM

Inventor： BARILE C A ,  BRILL R M ,  FORNERIS J L ,  REGH J

IPC: H01L21/306 ,  H01L21/033 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/266 ,  H01L21/331 ,  H01L29/73 ,  H01L

公开(公告)号：AU504131B2

公开(公告)日：1979-10-04

申请号：AU2365277

申请日：1977-03-25

Applicant: IBM

Inventor： BARILE C A ,  BRILL R M ,  FORNERIS J L ,  REGH J

IPC: H01L21/306 ,  H01L21/033 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/266 ,  H01L21/331 ,  H01L29/73 ,  H01L21/283 ,  H01L21/31 ,  H01L21/32 ,  H01L27/04

公开(公告)号：SE7702443L

公开(公告)日：1977-10-06

申请号：SE7702443

申请日：1977-03-04

Applicant: IBM

Inventor： BARILE C A ,  BRILL R M ,  FORNERIS J L ,  REGH J

IPC: H01L21/306 ,  H01L21/033 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/266 ,  H01L21/331 ,  H01L29/73 ,  H05K3/00

公开(公告)号：SE384761B

公开(公告)日：1976-05-17

申请号：SE7314793

申请日：1973-10-31

Applicant: IBM

Inventor： BARILE C A ,  DOCKERTY R C ,  NAGARAJAN A

IPC: H01L21/28 ,  H01L29/78 ,  H01L21/283 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L29/00 ,  H01L29/51

Abstract: Large threshold voltage shifts of silicon gate FET devices having a composite nitride-oxide gate dielectric are greatly reduced by subjecting the nitride to a dry oxygen annealing at temperatures between 970 DEG -1,150 DEG C prior to depositing the silicon gate electrode. Annealing at 1,050 DEG C applied for a duration of one-half to one hour produces excellent results.

公开(公告)号：BE805959A

公开(公告)日：1974-02-01

申请号：BE136586

申请日：1973-10-11

Applicant: IBM

Inventor： BARILE C A ,  DOCKERTY R C ,  NAGARAJAN A

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/283 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L29/00 ,  H01L29/51 ,  H01L

Abstract: Large threshold voltage shifts of silicon gate FET devices having a composite nitride-oxide gate dielectric are greatly reduced by subjecting the nitride to a dry oxygen annealing at temperatures between 970 DEG -1,150 DEG C prior to depositing the silicon gate electrode. Annealing at 1,050 DEG C applied for a duration of one-half to one hour produces excellent results.