公开(公告)号：US3796928A

公开(公告)日：1974-03-12

申请号：US3796928D

申请日：1971-11-03

Applicant: IBM

Inventor： DOO V ,  HO I ,  JEN T

IPC: G11C27/04 ,  G11C19/18 ,  H01L21/00 ,  H01L21/33 ,  H01L21/339 ,  H01L27/105 ,  H01L29/70 ,  H01L29/762 ,  H01L19/00

CPC classification number: H01L27/1055 ,  G11C19/186 ,  H01L21/00

Abstract: A semiconductor bucket brigade shift register having a plurality of cells, each cell embodying a transistor and a large capacitance element coupled across the base and the collector contacts of the transistor. Each cell, includes a first layer of insulating material bonded to the surface of the semiconductor body, a second layer of polycrystalline silicon overlying the first layer, a third layer of insulating material over the second layer, emitter, base, and collector contacts to the body of semiconductor material extending through the first, second, and third layers and insulated from the second layer, an electrical connection between the base contact and the second layer of polycrystalline material, and a relatively large surface area of a conductive layer in contact with the collector contact overlying at least in part the second layer.

公开(公告)号：CA936626A

公开(公告)日：1973-11-06

申请号：CA998570

申请日：1967-08-24

Applicant: IBM

Inventor： MARVEL R ,  GREGOR L ,  HU SHIH-MING ,  PETRAK J ,  DOO V

IPC: H01L21/316 ,  H01L23/29 ,  H01L23/485

Abstract: 1,196,149. Etching. INTERNATIONAL BUSINESS MACHINES CORP. 2 Oct., 1967 [10 Oct., 1966], No. 44705/67. Heading B6J. [Also in Divisions C1 C7 and H1] An SiO 2 layer 50 is formed on Si substrate 51, which contains a PN junction extending to its surface, then Si nitride layer 52 is deposited over the SiO 2 . A photo-resist 54 is applied over the layer 52 and apertures 53a are formed in it. Hydrofluoric acid or R.F. sputtering is then used through the apertures 53a to etch "windows" 53b through layers 52 and 50. Where R.F. sputtering is used some of the SiO 2 layer 50 is left at the conclusion of sputtering and is removed by use of an etchant.

公开(公告)号：SE328168B

公开(公告)日：1970-09-07

申请号：SE165468

申请日：1968-02-08

Applicant: IBM

Inventor： DOO V ,  NICHOLS D ,  SILVEY G

IPC: C01B21/068 ,  C23C16/34 ,  H01L21/318 ,  C23C11/08

公开(公告)号：SE339847B

公开(公告)日：1971-10-25

申请号：SE1413566

申请日：1966-10-18

Applicant: IBM

Inventor： DOO V

IPC: H01L21/00 ,  H01L21/314 ,  H01L21/762 ,  H01L23/29 ,  H01L19/00

公开(公告)号：CA926022A

公开(公告)日：1973-05-08

申请号：CA971498

申请日：1966-09-28

Applicant: IBM

Inventor： DOO V

IPC: H01L21/00 ,  H01L21/314 ,  H01L21/762 ,  H01L23/29

公开(公告)号：SE318760B

公开(公告)日：1969-12-15

申请号：SE1346266

申请日：1966-10-05

Applicant: IBM

Inventor： DOO V ,  NICHOLS D ,  SILVEY G

IPC: C23C16/34 ,  H01L21/00 ,  H01L21/318 ,  H01L23/29 ,  C23C11/08

Abstract: 1,153,794. Silicon nitride films. INTERNATIONAL BUSINESS MACHINES CORP. 7 Oct., 1966 [11 Oct., 1965], No. 44808/66. Heading C1A. [Also in Division H1] A method of depositing a film of Si 3 N 4 on a substrate comprises supporting the substrate in a reaction zone, introducing into the zone and across the substrate surface a mixture of SiH 4 , N2 or a gaseous compound of nitrogen such as NH 3 , and sufficient H 2 carrier gas to slow down the reaction, heating the substrate to above 500‹ C., whereby a pin-hole free film of Si 3 N 4 is pyrolytically formed on the surface of the substrate. The substrate, which may be Si, Ge, SiO 2 , or graphite, is preferably heated to 700‹ to 1100‹ C. by RF heating.