Abstract:
A magnetic bubble device and its associated read, write, propagation, sensing, addressing, driving, timing and control elements are combined in a unitary magnetic sheet-semiconductor structure.
Abstract:
Apparatus for encoding multi-digit binary-coded-decimal numbers of a predetermined quantity of bits, for example, of at least two decimal digits, into a re-expressed lower number of bits, the binary-coded-decimal number being expressed in the form (abcd) (efgh). An encoder selects a set from a class of sets of bit symbols with each set corresponding to a respective combination of the bits in the most significant position, (a) and (e), of each of the four-bit groups representing the respective digits of the binary-coded-decimal number to be encoded. The selected set is the set which corresponds to the respective combination and the encoder determines certain of the bits of the multi-digit binary-coded-decimal number to be encoded and leaves undetermined the remaining bits of the number. The encoder is connected to register means having a plurality of bit positions which are equal to the quantity of bits less than the predetermined quantity, and stores not only the determined bit symbols but also the undetermined other bits of the multi-digit binary-codeddecimal number.
Abstract:
A semiconductor bucket brigade shift register having a plurality of cells, each cell embodying a transistor and a large capacitance element coupled across the base and the collector contacts of the transistor. Each cell, includes a first layer of insulating material bonded to the surface of the semiconductor body, a second layer of polycrystalline silicon overlying the first layer, a third layer of insulating material over the second layer, emitter, base, and collector contacts to the body of semiconductor material extending through the first, second, and third layers and insulated from the second layer, an electrical connection between the base contact and the second layer of polycrystalline material, and a relatively large surface area of a conductive layer in contact with the collector contact overlying at least in part the second layer.
Abstract:
The specification describes charge coupled devices in a bidirectional shift register and having a dynamic ordering capability. Charge coupled devices are shown in a semiconductor structure with FET amplifying circuits, uniquely adapted for bidirectional operation by means of a circuit which changes the order of occurrence of the clocking pulses. The density of charge coupled devices is preserved together with improved access time resulting from bidirectional operation and dynamic ordering.
Abstract:
An error detection system of n inputs is adaptable for fabrication in large scale integrated circuit form. An integrated circuit logic array provides a parity check in response to digital signals received via X and Y decoders. Reduction in the number of array cells and the X and Y driving decoder circuits is obtained by interconnecting even parity subgroups and odd parity subgroups of lines from the X and Y decoders to provide even master parity lines and odd master parity lines. A logic array having less than 2n operative cells compares the signals on the master lines and generates an error parity signal. The improvement described herein specifically separates the decoder driver circuits into independent subgroups, each having their own array comparators for handling a large number of inputs.
Abstract:
A modulo 9 residue generating and checking circuit for checking the accuracy of decimal addition operations in digital computers and other data processing equipment. A set of data words each representing a number to be added is transmitted to a multinumber adder which adds the words and provides a smaller set of words as a subtotal sum. The bits of the subtotal words are then divided into two groups. Each group of bits is fed to a respective modulo 9 residue generator which calculates the modulo 9 residue of the group. The two resulting residues are then fed to a third modulo 9 residue generator which calculates the modulo 9 residue of the sum of the two residues, thereby providing the modulo 9 residue of the sum of the original set of data words. This result may then be compared in the conventional manner with the modulo 9 residue of the sum resulting from the addition operation to be checked.
Abstract:
An error detection system of n inputs is adaptable for fabrication in large scale integrated circuit form. An integrated circuit logic array provides a parity check in response to digital signals received via X and Y decoders. Reduction in the number of array cells and the X and Y driving decoder circuits is obtained by interconnecting even parity subgroups and odd parity subgroups of lines from the X and Y decoders to provide even master parity lines and odd master parity lines. A logic array having less than 2n operative cells compares the signals on the master lines and generates an error parity signal.
Abstract:
A monolithic memory comprising an array of semiconductor storage cells and a plurality of decoders for accessing information to the storage cells during a given duty cycle. Reduced power consumption is achieved by the application of addressing signals to the decoder input lines for a given time period less than the accessing duty cycle in order to attain full duty cycle activating signals on the decoder output lines for accessing the memory array, and also by virtue of the selected address input lines associated with a selected decoder not drawing current during the given time period.
Abstract:
A fast adder for adding more than three words, the correspondingly weighted bits of which are applied to respective bit column adders. The column adders simultaneously produce respective sum and carry result bits of overlapping positional significance or weight. The maximum number of result bits having the same weight is determined by the quantity of words to be added at the same time (which establishes the number of bits in each bit column). In the disclosed embodiment, seven words are added at a given time and no more than three of the generated result bits have the same weight. In effect, the seven operand words are reduced to a subtotal of three result operand words in one computational cycle irrespective of the bit length of the words being added. The subtotal operands are reduced to a final sum by application to conventional carry save and carry lookahead adders. Equal weighted wire-ORing and matrix memory techniques are employed in the respective column adders to conserve required computational hardware and to facilitate large scale circuit integration.
Abstract:
The disclosures describes a transistor storage cell operable both as a random access read/write memory cell or as a read only memory cell. The memory cell structure includes a bistable circuit adapted to be set into one of two stable conditions and an imbalancing means for providing structural asymmetry. The memory cell is operable either as a read/write cell or, by accessing the cell through the imbalancing means, the latent image provided by the structural asymmetry of the cell is read out without affecting the information contained in the cell from the read/write mode of operation.