公开(公告)号：FR2296307A1

公开(公告)日：1976-07-23

申请号：FR7534734

申请日：1975-11-07

Applicant: IBM

Inventor： CAVALIERE JOSEPH R ,  EARDLEY DAVID B

IPC: H03H1/00 ,  H03H11/52 ,  H03K3/3565 ,  H03K5/02 ,  H03K17/0416 ,  H03K19/017 ,  H04B3/18 ,  H03H11/00

Abstract: The complementary metal-oxide-semiconductor technology is used to produce an integrated circuit with a negative resistance characteristic under voltage application to a given circuit region. A metal-oxide-semiconductor transistor of a first channel type has its gate connected to the switching nodes and its source-drain path in series with a load to operating voltage source. A second such transistor of opposite channel type has its source-drain path connecting the switching node to the operating voltage source terminal, coupled to the load. This second transistor gate is connected to the junction point of the load and the first transistor. Thus the application of a voltage to a given region at the switching node the source-drain path of the second transistor becomes conductive.

公开(公告)号：DE2549308A1

公开(公告)日：1976-07-08

申请号：DE2549308

申请日：1975-11-04

Applicant: IBM

Inventor： GRUODIS ALGIRDAS J ,  CAVALIERE JOSEPH R ,  EARDLEY DAVID B

IPC: H03H1/00 ,  H03H11/52 ,  H03K3/3565 ,  H03K5/02 ,  H03K17/0416 ,  H03K19/017 ,  H04B3/18 ,  H01L23/56

Abstract: The complementary metal-oxide-semiconductor technology is used to produce an integrated circuit with a negative resistance characteristic under voltage application to a given circuit region. A metal-oxide-semiconductor transistor of a first channel type has its gate connected to the switching nodes and its source-drain path in series with a load to operating voltage source. A second such transistor of opposite channel type has its source-drain path connecting the switching node to the operating voltage source terminal, coupled to the load. This second transistor gate is connected to the junction point of the load and the first transistor. Thus the application of a voltage to a given region at the switching node the source-drain path of the second transistor becomes conductive.