公开(公告)号：US3669769A

公开(公告)日：1972-06-13

申请号：US3669769D

申请日：1970-09-29

Applicant: IBM

Inventor： BADAMI ANGELO V ,  EBERT EKKEHARD ,  KEMLAGE BERNARD M ,  KROELL KARL E ,  POGGE H BERNHARD

IPC: C30B25/02 ,  H01L21/205 ,  H01L21/22 ,  H01L7/36 ,  C23C13/00

CPC classification number: C30B29/06 ,  C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2205 ,  Y10S148/007 ,  Y10S148/037 ,  Y10S148/145 ,  Y10S438/916

Abstract: AUTODOPING IS MINIMIZED DURING THE GROWTH OF AN EPITAXIAL LAYER OF A SEMICONDUCTOR SUBSTRATE BY USING A GASEOUS REACTION MIXTURE THAT DEPOSITS THE INITIAL CAPPING LAYER AT A RELATIVELY SLOW DEPOSITION RATE. THE REACTION MIXTURE CONTAINS A RELATIVELY MINOR PORTION OF A SEMICONDUCTOR COMPOUND ALONG WITH THE CARRIER GAS. SUBSEQUENTLY, A SECOND GASEOUS REACTION MIXTURE CONTAINING A GREATER PORTION OF A COMPOUND OF A SEMICONDUCTOR MATERIAL IS USED TO COMPLETE THE DEPOSITION OF THE EPITXIAL LAYER. THIS IS DONE MERELY TO REDUCE THE TOTAL GROWTH CYCLE.

公开(公告)号：US3421956A

公开(公告)日：1969-01-14

申请号：US43691865

申请日：1965-03-03

Applicant: IBM

Inventor： EBERT EKKEHARD ,  SPIELMANN WERNER

IPC: C04B41/53 ,  H01L21/04 ,  H01L7/62 ,  C23F1/00

CPC classification number: C04B41/5361 ,  H01L21/0475

公开(公告)号：DE1467088A1

公开(公告)日：1969-10-30

申请号：DE1467088

申请日：1964-12-12

Applicant: IBM DEUTSCHLAND

Inventor： EBERT EKKEHARD ,  WERNER SPIELMANN DR

IPC: C01B31/36 ,  C30B25/02

公开(公告)号：GB1092582A

公开(公告)日：1967-11-29

申请号：GB454166

申请日：1966-02-02

Applicant: IBM

Inventor： SPIELMANN WERNER ,  EBERT EKKEHARD

IPC: C01B31/36 ,  C30B1/10

Abstract: Monocrystalline silicon carbide is formed on a heated silicon substrate by decomposition of a hydrocarbon mixed with an inert gas carrier, on the surface of the silicon. The silicon is heated to 1300 DEG C. by induction, and the hydrocarbon which is preferably propane is introduced into the reaction vessel at a rate of 0.6 cm.3/min. and mixed with argon introduced at a rate of 15 x 103 cm.3/min. The pressure in the vessel is between 10-5 Torr.

公开(公告)号：DE1694504A1

公开(公告)日：1971-04-29

申请号：DE1694504

申请日：1964-12-05

Applicant: IBM DEUTSCHLAND

Inventor： SPIELMANN WERNER DR ,  EBERT EKKEHARD

IPC: C30B25/02 ,  B01J17/32

公开(公告)号：CA786296A

公开(公告)日：1968-05-28

申请号：CA786296D

Applicant: IBM

Inventor： SPIELMANN WERNER ,  EBERT EKKEHARD

公开(公告)号：DE1467085A1

公开(公告)日：1970-02-19

申请号：DE1467085

申请日：1964-07-25

Applicant: IBM DEUTSCHLAND

Inventor： EBERT EKKEHARD ,  IMMENDOERFER MARTIN ,  SPIELMANN WERNER

IPC: C01B31/36 ,  H01L21/00 ,  H01L29/24 ,  B01J17/32

Abstract: SiC crystals are grown epitaxially by heating a SiC base crystal and decomposing thereon a gas mixture containing silanes and hydrocarbons. The gas mixture may include SiH4 and CH4, and may contain an inert carrier gas, e.g. Ar. The gas mixture may contain doping material, e.g. PH3 or (N2 + B2H6) for N-type conductivity, Al(BH4)3 for P-type, or BBr3. The reactants may be heated to 1500-2000 DEG C. The process may be carried out in an apparatus of, e.g. quartz, in which is mounted a graphite or tantalum block supporting the SiC base crystal, which crystal is heated by an induction coil around the apparatus.

公开(公告)号：DE1242972B

公开(公告)日：1967-06-22

申请号：DEJ0025392

申请日：1964-03-06

Applicant: IBM DEUTSCHLAND

Inventor： EBERT EKKEHARD ,  SPIELMANN WERNER

IPC: C04B41/53 ,  H01L21/04 ,  H01L7/62

Abstract: 1,023,749. Etching. INTERNATIONAL BUSINESS MACHINES CORPORATION. Feb. 12, 1965 [March 6, 1964], No. 4795/65. Heading B6J. A body of silicon carbide is etched in a melt of sodium nitrite and sodium dioxide in a ratio of 1 : 1 at a temperature of 400-600‹ C., after first being mechanically smoothed, washed with hydrofluoro-nitric acid and rinsed in distilled water and alcohol.