公开(公告)号：JPH11312734A

公开(公告)日：1999-11-09

申请号：JP3969299

申请日：1999-02-18

Applicant: IBM

Inventor： EDWARD C CORNEY III ,  STEPHEN E LUCY ,  COTE WILLIAM J ,  RONALD D GOLDBLATT

IPC: H01L21/768 ,  H01L21/28 ,  H01L21/283 ,  H01L21/98 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a forming method of a contact to a copper metal inside an insulating layer via on a semiconductor wafer. SOLUTION: This contact forming method includes the five steps comprising a first step of forming a wafer 20 having a patterned copper layer 22, a second step of forming an insulating film 24 on the copper layer 22, a third step of forming a via 26 in the insulating film 24, a fourth step of forming a wafer 20 in reducing atmosphere for reducing a copper oxide on the copper in the via 26, to produce a copper as well as the fifth step of bringing the wafer 20 into contact with the copper inside the via 26, without exposing the wafer 20 to the oxidizing environment but to make a liner 52 adhere to the wafer 20. In such a constitution, this contact forming method can solve the problem of copper bounce detected in the via 26 cleaned up by conventional sputtering process. In addition, the liner 52 is selected for the adhesion and the avoidance of copper diffusion as well.

公开(公告)号：JPH11343570A

公开(公告)日：1999-12-14

申请号：JP10850699

申请日：1999-04-15

Applicant: IBM

Inventor： EDWARD C CORNEY III ,  JOSEPH W KOORIWA ,  DAVID C SETLIPP

IPC: C23C14/34 ,  C23C14/04 ,  C23C14/16 ,  C23C14/54 ,  H01L21/285

Abstract: PROBLEM TO BE SOLVED: To obtain a method for uniformly depositing a thin film on a substrate and to obtain a device therefor. SOLUTION: This invention contains a step in which a wafer 100 is placed on a wafer check 110 and a step in which liq. nitrogen is fed through the check, and the wafer and the wafer check are cooled to about