公开(公告)号：DE1514072A1

公开(公告)日：1969-06-04

申请号：DE1514072

申请日：1965-12-03

Applicant: IBM

Inventor： EDWARD MUTTER WALTER ,  DONALD PURCELL EDWARD

IPC: C22C32/00 ,  C23C14/14 ,  H01B1/00 ,  H01L21/00 ,  H01L23/485

Abstract: 1,125,157. Contacts for semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 15 Dec., 1965 [24 Dec., 1964], No. 53162/65. Heading H1K. [Also in Division C7] An ohmic contact structure 18, 20 on a semiconductor body 10 is made of a material comprising 91-93% of a platinum group metal, the balance being carbon (see Division C7). The contact material may be coated with a high conductivity metal 22, 24 (Mo, Cr or W), the parts of the semi-conductor not covered by the contact material may have an oxide layer 26 produced thereon and the whole device may be encapsulated in glass 28. The body 10 may be of Si, the regions 14, 16 being doped respectively with Al and As.

公开(公告)号：DE1764951B1

公开(公告)日：1972-03-16

申请号：DE1764951

申请日：1968-09-11

Applicant: IBM

Inventor： EDWARD MUTTER WALTER ,  TOTTA PAUL

IPC: H01L21/00 ,  H01L23/485 ,  H01L23/522 ,  H01L5/14

Abstract: 1,233,466. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 12 Sept., 1968 [15 Sept., 1967], No. 43384/68. Heading H1K. A semi-conductor device comprises a body having a first insulating layer on one surface, a contact stripe making ohmic contact to the body through an aperture in the first insulating layer, a second insulating layer overlying the contact stripe and the first insulating layer and a laminated stripe contacting the contact stripe through an aperture in the second insulating layer, the laminated stripe comprising a layer of copper disposed between two layers of chromium. As shown, Fig. 1, P and N-type regions are produced in an N-type silicon wafer by diffusion or by etching cavities and epitaxially refilling them. A layer 18 of silicon dioxide covers the surface and thin platinum silicide or palladium silicide layers 22 form ohmic contacts to the various regions. Molybdenum or tungsten contact stripes 24 contact the silicide layers and extend on to the surface of the silicon dioxide layer 18. A " glass " layer 20 is provided over the surface and laminar stripes 26 comprising a layer 28 of copper between two layers 27, 29 of chromium contact the contact stripes 24. A second " glass " layer 32 is provided on the surface and laminated contact pads 34, comprising layers 35, 36, 37 of chromium, nickel or copper, and gold respectively, contact laminar stripes 26 and have nickel plated copper balls 38 soldered to them. The lower face of the wafer is provided with a laminated layer 42, comprising a layer 44 of chromium, a layer 46 of nickel or copper and a layer 48 of gold by means of which the device may be soldered to a substrate. The silicon dioxide layer 18 may be applied by RF sputtering or by heating in steam, the first " glass " layer 20 may be applied by RF sputtering, pyrolytic techniques or glass sedimentation followed by fusing, and the second " glass " layer 32 is formed under non-oxidizing conditions, e.g. by RF sputtering. The insulating materials may be inorganic or organic and the term " glass " covers any amorphous inorganic material including silicon nitride, silicon dioxide and silicon monoxide. The metal layers may be applied by evaporation and selective removal. In a second embodiment, Fig. 2 (not shown), the first insulating layer is silicon dioxide or silica, the contact stripes make direct ohmic contact to the device regions and may comprise a layer of silver or gold disposed between two layers of molybdenum or of chromium or may comprise a single layer of molybdenum. The surface is provided with a " glass " layer and second level interconnections of chromiumcopper-chromium, covered with a second glass layer and a third level of interconnections which are covered with a third glass layer provided with laminated contact pads on which are formed solder mounds.

公开(公告)号：DE1589975A1

公开(公告)日：1970-04-30

申请号：DE1589975

申请日：1967-10-26

Applicant: IBM

Inventor： PHILIP CASTRUCCI PAUL ,  WITT DAVID DE ,  ABHIMANYU DHAKA VIR ,  EDWARD MUTTER WALTER

IPC: H01L21/00 ,  H01L21/331 ,  H01L23/485 ,  H01L29/00 ,  H01L5/06

Abstract: 1,174,832. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 2 Oct., 1967 [27 Oct., 1966], No. 44711/67. Heading H1K. [Also in Division C7] A method of forming an elongated metal contact on a semi-conductor device comprises; (a) providing a protective coating, preferably of silicon dioxide or silicon nitride, on the semiconductor surface and forming at least one elongated aperture in the coating; (b) depositing a first layer of metal, preferably Pt, Pd or Mo, over the protective coating and the exposed semi-conductor surface to form an ohmic contact with the semi-conductor; (c) removing the metal from the protective coating; (d) depositing, e.g. by electroplating or by chemical or electroless deposition, a second layer of metal, preferably palladium, over the first layer within the aperture to increase the conductivity of the contact; and (e) depositing a third layer of metal over the protective coating to form an external hand pattern having an extension overlaying a portion only of the second layer. The third layer may consist of Al, Mo or a sandwich of Cu-Mo, Cr-Cu, Mo-Cu or Mo-Au.