Reinforced single element bottom electrode for MTJ-containing devices

    公开(公告)号:GB2601964A

    公开(公告)日:2022-06-15

    申请号:GB202203040

    申请日:2020-08-20

    Applicant: IBM

    Abstract: A dielectric material structure is formed laterally adjacent to a bottom portion of a bottom electrode metal-containing portion that extends upward from an electrically conductive structure that is embedded in an interconnect dielectric material layer. The physically exposed top portion of the bottom electrode metal-containing portion is then trimmed to provide a bottom electrode of unitary construction (i.e., a single piece) that has a lower portion having a first diameter and an upper portion that has a second diameter that is greater than the first diameter. The presence of the dielectric material structure prevents tilting and/or bowing of the resultant bottom electrode. Thus, a stable bottom electrode is provided.

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