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公开(公告)号：GB2605096A
公开(公告)日：2022-09-21
申请号：GB202208597
申请日：2020-11-18
Applicant: IBM
Inventor： STEVEN HOLMES , BRUCE DORIS , MATTHIAS GEORG GOTTWALD , RAJIV V JOSHI , SUDIPTO CHAKRABORTY
Abstract: A within-chip magnetic field control device is formed in proximity to a Josephson Junction (JJ) structure. The within-chip magnetic field control device includes wiring structures that are located laterally adjacent to the JJ structure. In some embodiments, the magnetic field control device also includes, in addition to the wiring structures, a conductive plate that is connected to the wiring structures and is located beneath the JJ structure. Use of electrical current through the wiring structures induces, either directly or indirectly, a magnetic field into the JJ structure. The strength of the field can be modulated by the amount of current passing through the wiring structures. The magnetic field can be turned off as needed by ceasing to allow current to flow through the wiring structures.
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公开(公告)号：GB2594868B
公开(公告)日：2022-08-17
申请号：GB202110417
申请日：2019-12-17
Applicant: IBM
Inventor： NATHAN MARCHACK , BRUCE DORIS , POUYA HASHEMI
IPC: H01L21/00
Abstract: A bottom electrode structure for MRAM or MTJ-based memory cells comprises a taper so that the bottom CD is smaller than the top CD. A process of making a bottom electrode contact structure comprises etching a dielectric layer using a plasma chemistry with an increased degree of polymerization. We obtain a product made by this process.
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公开(公告)号：GB2577196A
公开(公告)日：2020-03-18
申请号：GB201916879
申请日：2018-05-14
Applicant: IBM
Inventor： RAJIV V JOSHI , NAIGANG WANG , BRUCE DORIS
IPC: H02M3/158
Abstract: Circuits and methods are disclosed for providing a supply voltage to a dynamic internal power supply node of a group of other circuits. A circuit includes a first transistor and a second transistor, of different channel types, coupled in parallel to a static power supply that supplies a constant power supply voltage. The circuit further includes a magnetic inductor having a first terminal connected to a common node between the first transistor and the second transistor and a second terminal connected to the dynamic internal power supply node, to supply the dynamic internal power supply node with a boosted voltage having a magnitude greater than a magnitude of the constant power supply voltage by resonating with at least one capacitance coupled to the dynamic internal power supply node.
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公开(公告)号：GB2609775B
公开(公告)日：2025-04-16
申请号：GB202215020
申请日：2021-02-01
Applicant: IBM
Inventor： POUYA HASHEMI , BRUCE DORIS , JANUSZ JOZEF NOWAK , JONATHAN ZANHONG SUN
Abstract: A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, and forming a second magnetic tunnel junction stack on the spin conducting layer. The second magnetic tunnel junction stack has a width that is greater than a width of the first magnetic tunnel junction stack.
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公开(公告)号：GB2577210B
公开(公告)日：2022-05-11
申请号：GB201917541
申请日：2018-05-31
Applicant: IBM
Inventor： RAJIV V JOSHI , NAIGANG WANG , BRUCE DORIS
Abstract: Semiconductor devices and methods relating to the semiconductor devices are provided. A semiconductor device includes a resonant clock circuit. The semiconductor device further includes an inductor. The semiconductor device also includes a magnetic layer formed of a magnetic material disposed in between a portion of the resonant clock circuit and the inductor. Clock signals of the resonant clock circuit are utilized by the magnetic layer.
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Patent Agency Ranking
公开(公告)号：GB2575748A
公开(公告)日：2020-01-22
申请号：GB201915102
申请日：2018-03-20
Applicant: IBM
Inventor： SUFI ZAFAR , EUGENE O'SULLIVAN , BRUCE DORIS
IPC: A61B5/053
Abstract: A sensor includes a sensing circuit (116, 126) and a probe (112, 122) communicatively coupled to the sensing circuit (116, 126). The probe (112, 122) includes a three-dimensional (3D) sensing surface coated with a recognition element and configured to, based at least in part on the 3D sensing surface interacting with a predetermined material, generate a first measurement. In some embodiments, the 3D sensing surface is shaped as a pyramid, a cone, or a cylinder to increase the sensing surface area over a two- dimensional (2D) sensing surface. In some embodiments, the 3D sensing facilitates penetration of the 3D sensing surface through the wall of the biological cell (142A).
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公开(公告)号：GB2602738B
公开(公告)日：2023-09-27
申请号：GB202203398
申请日：2020-08-18
Applicant: IBM
Inventor： BRUCE DORIS , THITIMA SUWANNASIRI , NATHAN MARCHACK , POUYA HASHEMI
Abstract: A multilayered bottom electrode for a magnetic tunnel junction (MTJ) containing device is provided that includes, from bottom to top, a base segment having a first diameter and composed of a remaining portion of a first bottom electrode metal-containing layer, a middle segment having a second diameter and composed of a remaining portion of a second bottom electrode metal-containing layer, and an upper segment having a third diameter and composed of a remaining portion of a third bottom electrode metal-containing layer, wherein the first diameter is greater than the second diameter, and the third diameter is equal to, or less than, the second diameter. The wider base segment of each multilayered bottom electrode prevents tilting and/or bowing of the resultant bottom electrode. Thus, a stable bottom electrode is provided.
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公开(公告)号：GB2601964A
公开(公告)日：2022-06-15
申请号：GB202203040
申请日：2020-08-20
Applicant: IBM
Inventor： BRUCE DORIS , EILEEN GALLIGAN , NATHAN MARCHACK , POUYA HASHEMI
IPC: H01L43/08
Abstract: A dielectric material structure is formed laterally adjacent to a bottom portion of a bottom electrode metal-containing portion that extends upward from an electrically conductive structure that is embedded in an interconnect dielectric material layer. The physically exposed top portion of the bottom electrode metal-containing portion is then trimmed to provide a bottom electrode of unitary construction (i.e., a single piece) that has a lower portion having a first diameter and an upper portion that has a second diameter that is greater than the first diameter. The presence of the dielectric material structure prevents tilting and/or bowing of the resultant bottom electrode. Thus, a stable bottom electrode is provided.
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公开(公告)号：GB2577210A
公开(公告)日：2020-03-18
申请号：GB201917541
申请日：2018-05-31
Applicant: IBM
Inventor： RAJIV V JOSHI , NAIGANG WANG , BRUCE DORIS
IPC: H03K5/00
Abstract: Semiconductor devices and methods relating to the semiconductor devices are provided. A semiconductor device includes a resonant clock circuit. The semiconductor device further includes an inductor. The semiconductor device also includes a magnetic layer formed of a magnetic material disposed in between a portion of the resonant clock circuit and the inductor. Clock signals of the resonant clock circuit are utilized by the magnetic layer.
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公开(公告)号：GB2566664A8
公开(公告)日：2019-03-27
申请号：GB201901265
申请日：2017-06-13
Applicant: IBM
Inventor： HARIKLIA DELIGIANNI , EUGENE O'SULLIVAN , NAIGANG WANG , BRUCE DORIS
IPC: H01F17/00 , H01L23/522
Abstract: A magnetic laminating structure includes alternating layers of a magnetic material (112) and a multilayered insulating material, wherein the multilayered insulating material is intermediate adjacent magnetic material layers and comprises a first insulating layer (114A) abutting at least on additional insulating layer (114B), and wherein the first insulating layer (114A) and the at least one additional insulating layer (114B) comprise different dielectric materials and/or are formed by a different deposition process.
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