公开(公告)号：GB2594868B

公开(公告)日：2022-08-17

申请号：GB202110417

申请日：2019-12-17

Applicant: IBM

Inventor： NATHAN MARCHACK ,  BRUCE DORIS ,  POUYA HASHEMI

IPC: H01L21/00

Abstract: A bottom electrode structure for MRAM or MTJ-based memory cells comprises a taper so that the bottom CD is smaller than the top CD. A process of making a bottom electrode contact structure comprises etching a dielectric layer using a plasma chemistry with an increased degree of polymerization. We obtain a product made by this process.

公开(公告)号：GB2594868A

公开(公告)日：2021-11-10

申请号：GB202110417

申请日：2019-12-17

Applicant: IBM

Inventor： NATHAN MARCHACK ,  BRUCE DORIS ,  POUYA HASHEMI

IPC: H01L21/00

Abstract: A bottom electrode structure for MRAM or MTJ-based memory cells comprises a taper so that the bottom CD is smaller than the top CD. A process of making a bottom electrode contact structure comprises etching a dielectric layer using a plasma chemistry with an increased degree of polymerization. We obtain a product made by this process.

公开(公告)号：GB2602738A

公开(公告)日：2022-07-13

申请号：GB202203398

申请日：2020-08-18

Applicant: IBM

Inventor： BRUCE DORIS ,  THITIMA SUWANNASIRI ,  NATHAN MARCHACK ,  POUYA HASHEMI

IPC: H01L27/22 ,  H10N50/80 ,  H10N50/01 ,  H10N50/10

Abstract: A multilayered bottom electrode for a magnetic tunnel junction (MTJ) containing device is provided that includes, from bottom to top, a base segment having a first diameter and composed of a remaining portion of a first bottom electrode metal-containing layer, a middle segment having a second diameter and composed of a remaining portion of a second bottom electrode metal-containing layer, and an upper segment having a third diameter and composed of a remaining portion of a third bottom electrode metal-containing layer, wherein the first diameter is greater than the second diameter, and the third diameter is equal to, or less than, the second diameter. The wider base segment of each multilayered bottom electrode prevents tilting and/or bowing of the resultant bottom electrode. Thus, a stable bottom electrode is provided.

公开(公告)号：GB2602738B

公开(公告)日：2023-09-27

申请号：GB202203398

申请日：2020-08-18

Applicant: IBM

Inventor： BRUCE DORIS ,  THITIMA SUWANNASIRI ,  NATHAN MARCHACK ,  POUYA HASHEMI

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10

Abstract: A multilayered bottom electrode for a magnetic tunnel junction (MTJ) containing device is provided that includes, from bottom to top, a base segment having a first diameter and composed of a remaining portion of a first bottom electrode metal-containing layer, a middle segment having a second diameter and composed of a remaining portion of a second bottom electrode metal-containing layer, and an upper segment having a third diameter and composed of a remaining portion of a third bottom electrode metal-containing layer, wherein the first diameter is greater than the second diameter, and the third diameter is equal to, or less than, the second diameter. The wider base segment of each multilayered bottom electrode prevents tilting and/or bowing of the resultant bottom electrode. Thus, a stable bottom electrode is provided.

公开(公告)号：GB2601964A

公开(公告)日：2022-06-15

申请号：GB202203040

申请日：2020-08-20

Applicant: IBM

Inventor： BRUCE DORIS ,  EILEEN GALLIGAN ,  NATHAN MARCHACK ,  POUYA HASHEMI

IPC: H01L43/08

Abstract: A dielectric material structure is formed laterally adjacent to a bottom portion of a bottom electrode metal-containing portion that extends upward from an electrically conductive structure that is embedded in an interconnect dielectric material layer. The physically exposed top portion of the bottom electrode metal-containing portion is then trimmed to provide a bottom electrode of unitary construction (i.e., a single piece) that has a lower portion having a first diameter and an upper portion that has a second diameter that is greater than the first diameter. The presence of the dielectric material structure prevents tilting and/or bowing of the resultant bottom electrode. Thus, a stable bottom electrode is provided.