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公开(公告)号:DE3381270D1
公开(公告)日:1990-04-05
申请号:DE3381270
申请日:1983-11-10
Applicant: IBM
Inventor: FITZGERALD JOSEPH MICHAEL
IPC: H01L21/822 , H01L21/82 , H01L23/528 , H01L27/04 , H01L27/118 , H03K19/0944 , H03K19/173 , H01L27/02 , H01L23/52 , H03K19/00
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公开(公告)号:DE3685931D1
公开(公告)日:1992-08-13
申请号:DE3685931
申请日:1986-09-09
Applicant: IBM
Inventor: DUNHAM BRADFORD , FITZGERALD JOSEPH MICHAEL , WILLIAMS ROBERT RUSSELL
IPC: H01L21/822 , H01L21/3205 , H01L21/82 , H01L23/52 , H01L23/528 , H01L27/02 , H01L27/04 , H01L27/118
Abstract: A VLSI chip (100) has multiple annular rings (122) of circuit cells, interspersed with annular wiring channels (123) for interconnecting the cells. Another wiring layer runs perpendicular to the rings. A central chip area (110) contains all the I/O connections (113) for the chip.
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公开(公告)号:DE3685931T2
公开(公告)日:1993-02-25
申请号:DE3685931
申请日:1986-09-09
Applicant: IBM
Inventor: DUNHAM BRADFORD , FITZGERALD JOSEPH MICHAEL , WILLIAMS ROBERT RUSSELL
IPC: H01L21/822 , H01L21/3205 , H01L21/82 , H01L23/52 , H01L23/528 , H01L27/02 , H01L27/04 , H01L27/118
Abstract: A VLSI chip (100) has multiple annular rings (122) of circuit cells, interspersed with annular wiring channels (123) for interconnecting the cells. Another wiring layer runs perpendicular to the rings. A central chip area (110) contains all the I/O connections (113) for the chip.
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公开(公告)号:DE3668517D1
公开(公告)日:1990-03-01
申请号:DE3668517
申请日:1986-09-05
Applicant: IBM
Inventor: FITZGERALD JOSEPH MICHAEL , NGUYEN PHO HOANG , WILLIAMS ROBERT RUSSELL
IPC: H01L21/822 , H01L21/3205 , H01L21/82 , H01L23/485 , H01L23/52 , H01L23/528 , H01L27/02 , H01L27/04 , H01L27/118 , H01L23/48
Abstract: A VLSI chip (100) has multiple annular rings (122) of circuit cells, interspersed with annular wiring channels (123) for interconnecting the cells. Another wiring layer runs perpendicular to the rings. A central chip area (110) contains all the I/O connections for the chip.
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公开(公告)号:DE3480136D1
公开(公告)日:1989-11-16
申请号:DE3480136
申请日:1984-12-14
Applicant: IBM
Inventor: AIPPERSPACH ANTHONY GUS , FITZGERALD JOSEPH MICHAEL , WU PHILIP TUNG
Abstract: Static memory cells (11) of an array (1) include FET latches for storing read/write data and transfers FETs having a first or a second threshold voltage for storing read-only data. To recover read/write data from an addressed cell (11), a word-line voltage higher than both threshold voltages is applied to word lines (Wo-Wn) by voltage source means (23). To recover read-only data from the same addressed cell (11), a word-line voltage intermediate the threshold voltages is applied under control of a read-only mode line (211) and the resulting voltages on the bit lines (Bo-Bm, B min o-B min m) are decoded (34). Multiple read-only bits in a single cell (11) are allowed by lowering the cell supply voltage when read-only data are addressed.
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