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    READ-ONLY STORAGE
    1.
    发明专利
    READ-ONLY STORAGE 未知

    公开(公告)号：DE3168764D1

    公开(公告)日：1985-03-21

    申请号：DE3168764

    申请日：1981-07-06

    Applicant: IBM

    Inventor： WU PHILIP TUNG

    IPC: G11C17/00 ,  G11C11/56 ,  G11C16/04 ,  G11C17/12 ,  G11C17/18

    Abstract: Read-only storage chip stores three levels per single-FET cell by providing each cell with an enhancement gate, a depletion gate or no gate connection. Level decoders convert pairs of these three-level signals to triplets of two-level data signals for binary output from the ROS.

    COMBINED READ-ONLY AND READ/WRITE MEMORY AND METHOD OF ACCESSING THE SAME
    2.
    发明专利
    COMBINED READ-ONLY AND READ/WRITE MEMORY AND METHOD OF ACCESSING THE SAME 未知

    公开(公告)号：DE3480136D1

    公开(公告)日：1989-11-16

    申请号：DE3480136

    申请日：1984-12-14

    Applicant: IBM

    Inventor： AIPPERSPACH ANTHONY GUS ,  FITZGERALD JOSEPH MICHAEL ,  WU PHILIP TUNG

    IPC: G11C14/00 ,  G11C7/20 ,  G11C11/00 ,  G11C11/41 ,  G11C11/56 ,  G11C17/12 ,  G11C11/40

    Abstract: Static memory cells (11) of an array (1) include FET latches for storing read/write data and transfers FETs having a first or a second threshold voltage for storing read-only data. To recover read/write data from an addressed cell (11), a word-line voltage higher than both threshold voltages is applied to word lines (Wo-Wn) by voltage source means (23). To recover read-only data from the same addressed cell (11), a word-line voltage intermediate the threshold voltages is applied under control of a read-only mode line (211) and the resulting voltages on the bit lines (Bo-Bm, B min o-B min m) are decoded (34). Multiple read-only bits in a single cell (11) are allowed by lowering the cell supply voltage when read-only data are addressed.

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