公开(公告)号：JP2002280391A

公开(公告)日：2002-09-27

申请号：JP2002008478

申请日：2002-01-17

Applicant: IBM

Inventor： PAUL S ANDREE ,  FRANK R RIBUSHU ,  TSUJIMURA TAKATOSHI

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device, a thin-film transistor(TFT) and TFT manufacturing method. SOLUTION: The semiconductor device includes a top-gate type thin-film transistor(TFT) which is formed on a substrate 1. The top-gate type TFT comprises an insulation layer 3 deposited on the substrate 1, a source and drain electrodes 4, 5 of a metal - dopant compound deposited on the insulation layer 3, a polycrystalline Si(poly-Si) layer 6 deposited on the upsides of the insulation layer 3, the source and drain electrodes 4, 5, an Ohmic contact layer 7, formed by migration of the dopant from the metal - dopant compound between the metal - dopant compound and the poly-Si layer 6, a gate insulation layer 9 deposited on the poly-Si layer 6 and a gate electrode 10 formed on the gate insulation layer 9. The poly-Si layer 6 is crystallized by lateral crystallization due to the metal induction.

公开(公告)号：JP2001148483A

公开(公告)日：2001-05-29

申请号：JP2000294866

申请日：2000-09-27

Applicant: IBM

Inventor： PAUL S ANDREE ,  FRANK R RIBUSHU

IPC: G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L27/12 ,  H01L29/417 ,  H01L29/49 ,  H01L29/786 ,  H01L51/05 ,  H01L51/00

Abstract: PROBLEM TO BE SOLVED: To provide a self-matching thin film transistor structure and the manufacturing method. SOLUTION: A gate electrode layer formed on a substrate and an insulating layer formed on the gate electrode layer are included in a transistor. A first conductive layer forms a first part and a second part, which are isolated by a gap between them. The gap is formed in a position corresponding to a gate electrode in the gate electrode layer. A doping layer is formed on the first part and the second part of the first conductive layer and the source and the drain of the transistor are formed. In activating the gate electrode, the semiconductor layer is formed by being brought into contact with the insulating layer on the first and the second doping layers and in the gap, so that current can flow directly between the first and the second portions of the first conductive layer across the gap.

公开(公告)号：JP2001127307A

公开(公告)日：2001-05-11

申请号：JP2000280298

申请日：2000-09-14

Applicant: IBM

Inventor： PAUL S ANDREE ,  FRANK R RIBUSHU

IPC: H01L21/28 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for TFT by utilizing a single lithography step to suppress the time and cost for manufacturing a self-matching device to minimum. SOLUTION: A semi-transparent gate electrode 10 is formed on a substrate 12, over which a first dielectrics layer 14, semiconductor layer 16, and second dielectrics layer 19 are allowed to stick, and a photoresist is allowed to stick on it. The photoresist is exposed from the rear surface with the gate electrode 10 as a mask for patterning, which is used as a mask for etching the second dielectrics layer 19. Then the photoresist is removed and a doped semiconductor layer 24 and conductive layer 28 are allowed to stick on the semiconductor layer 16 and dielectrics layer 19, which are patterned to provide source electrode and drain electrode 42 and 44.