HIGH PERFORMANCE THIN FILM TRANSISTOR FOR FLAT PANEL DISPLAY AND ACTIVE MATRIX PROCESS

    公开(公告)号:JP2001148483A

    公开(公告)日:2001-05-29

    申请号:JP2000294866

    申请日:2000-09-27

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To provide a self-matching thin film transistor structure and the manufacturing method. SOLUTION: A gate electrode layer formed on a substrate and an insulating layer formed on the gate electrode layer are included in a transistor. A first conductive layer forms a first part and a second part, which are isolated by a gap between them. The gap is formed in a position corresponding to a gate electrode in the gate electrode layer. A doping layer is formed on the first part and the second part of the first conductive layer and the source and the drain of the transistor are formed. In activating the gate electrode, the semiconductor layer is formed by being brought into contact with the insulating layer on the first and the second doping layers and in the gap, so that current can flow directly between the first and the second portions of the first conductive layer across the gap.

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