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公开(公告)号：CA1059197A
公开(公告)日：1979-07-24
申请号：CA238134
申请日：1975-10-20
Applicant: IBM
Inventor： CHIOU CHARLES , GALLI GUIDO , LOEFFLER KARL H , LORENZ MAX R
Abstract: INK JET NOZZLE STRUCTURE AND METHOD OF MAKING A nozzle array structure for pressurized fluid jets includes a uniform deposited membrane having an array of uniform small orifices therein overlaying a planar substrate having an array of larger aperture openings therethrough with approximately the same central axes as the orifice array. The method of making includes forming a substrate of a planar single crystal material oriented with the (100) planes parallel to the surface. A membrane comprising a uniform coating of an inorganic material is applied to the planar surface of the substrate. The substrate is preferentially etched from the rear surface to form an array of openings therein extending therethrough to the membrane. The membrane is then selectively eroded to form an array of uniform small orifices therein.
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公开(公告)号：CA1051505A
公开(公告)日：1979-03-27
申请号：CA185520
申请日：1973-11-09
Applicant: IBM
Inventor： BINGHAM RONALD E , CECIL THOMAS F II , GALLI GUIDO , POQUETTE GEREON E
Abstract: CORONA CHARGING DEVICE A negatively biased corona discharge system includes a conductive electrode having a thin inorganic dielectric outer layer bonded thereto which is employed as a corona discharge electrode. The discharge system is utilized for uniformly placing a negative charge on an insulator substrate such as an electrophotographic imaging surface. The coating on the electrode acts to suppress the widely spaced emission nodes common to all negatively biased metal corona discharge electrodes. The coated electrode may, therefore, be placed in close proximity to the substrate which it is charging and operated at low emission densities without sacrificing charge uniformity thereby reducing the power requirement of the corona discharge system.
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公开(公告)号：DE2554085A1
公开(公告)日：1976-07-15
申请号：DE2554085
申请日：1975-12-02
Applicant: IBM
Inventor： CHIOU CHARLES , GALLI GUIDO , LOEFFLER KARL H , LORENZ MAX RUDOLPH
Abstract: 1493667 Ink jets INTERNATIONAL BUSINESS MACHINES CORP 27 Oct 1975 [31 Dec 1974] 43996/75 Heading B6P A nozzle structure for an ink jet includes a monocrystalline semi-conducting substrate 20 with an array of passages 21 (only one shown), and a layer 22 of uniform thickness overlying the substrate with orifices 23, each passage 21 is associated with an orifice 23 and their central axes are aligned. As shown a silicon substrate 20 receives a layer 22 (silicon dioxide or nitride) by vapour deposition, sputtering or thermal oxide growth. In step C a mask 35 is applied to control the anisotropic etching to produce passage 21 (step D). The orifice 23 can be produced by chemical/ sputter/ion/plasma etch through a mask 36.
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公开(公告)号：DE2933172A1
公开(公告)日：1980-03-13
申请号：DE2933172
申请日：1979-08-16
Applicant: IBM
Inventor： DAVIES JOHN EDWARD , GALLI GUIDO
IPC: C30B19/06 , C30B19/10 , H01F41/28 , H01L21/208 , B01J17/06
Abstract: A method of forming an improved liquid phase epitaxial film on a wafer. The resultant film has improved uniformity of magnetic properties, such as the collapse field (Ho), across the surface of the wafer as well as being substantially free of mesa defects on the surface. The method includes the step of growing the liquid phase epitaxial film while the wafer is in the horizontal plane. The wafer is removed from the melt while the wafer is tilted at an angle from the horizontal plane so that the melt may drain from the wafer. Then the wafer is positioned in a horizontal plane again and rotated to remove the remaining melt droplets from the edge of the wafer. In a preferred embodiment, a plurality of wafers are positioned in a wafer holding means so that the wafers are arranged in a stacked manner having substantially the same space between adjacent wafers. Wafers may also be stacked in pairs that are back-to-back while carrying out this method.
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Patent Agency Ranking
公开(公告)号：DE2362915A1
公开(公告)日：1974-07-04
申请号：DE2362915
申请日：1973-12-18
Applicant: IBM
Inventor： BINGHAM RONALD EUGENE , CECIL II THOMAS FREDERICK , LEXINGTON KY , GALLI GUIDO , POQUETTE GEREON ELMER
IPC: G03G15/02
Abstract: A negatively biased corona discharge system includes a conductive electrode having a thin inorganic dielectric outer layer bonded thereto which is employed as a corona discharge electrode. The discharge system is utilized for uniformly placing a negative charge on an insulator substrate such as an electrophotographic imaging surface. The coating on the electrode acts to suppress the widely spaced emission nodes common to all negatively biased metal corona discharge electrodes. The coated electrode may, therefore, be placed in close proximity to the substrate which it is charging and operated at low emission densities without sacrificing charge uniformity thereby reducing the power requirement of the corona discharge system.
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公开(公告)号：AU524571B2
公开(公告)日：1982-09-23
申请号：AU4871879
申请日：1979-07-06
Applicant: IBM
Inventor： DAVIES JOHN EDWARD , GALLI GUIDO
IPC: C30B19/06 , C30B19/10 , H01F41/28 , H01L21/208 , B01J17/06
Abstract: A method of forming an improved liquid phase epitaxial film on a wafer. The resultant film has improved uniformity of magnetic properties, such as the collapse field (Ho), across the surface of the wafer as well as being substantially free of mesa defects on the surface. The method includes the step of growing the liquid phase epitaxial film while the wafer is in the horizontal plane. The wafer is removed from the melt while the wafer is tilted at an angle from the horizontal plane so that the melt may drain from the wafer. Then the wafer is positioned in a horizontal plane again and rotated to remove the remaining melt droplets from the edge of the wafer. In a preferred embodiment, a plurality of wafers are positioned in a wafer holding means so that the wafers are arranged in a stacked manner having substantially the same space between adjacent wafers. Wafers may also be stacked in pairs that are back-to-back while carrying out this method.
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公开(公告)号：CA1118666A
公开(公告)日：1982-02-23
申请号：CA332290
申请日：1979-07-20
Applicant: IBM
Inventor： DAVIES JOHN E , GALLI GUIDO
IPC: C30B19/06 , C30B19/10 , H01F41/28 , H01L21/208 , C30B19/00
Abstract: A METHOD FOR FORMING A LIQUID PHASE EPITAXIAL FILM ON A WAFER A method of forming an improved liquid phase epitaxial film on a wafer. The resultant film has improved uniformity of magnetic properties, such as the collapse field (Ho), across the surface of the wafer as well as being substantially free of mesa defects on the surface. The method includes the step of growing the liquid phase epitaxial film while the wafer is in the horizontal plane. The wafer is removed from the melt while the wafer is tilted at an angle from the horizontal plane so that the melt may drain from the wafer. Then the wafer is positioned in a horizontal plane again and rotated to remove the remaining melt droplets from the edge of the wafer. In a preferred embodiment, a plurality of wafers are positioned in a wafer holding means so that the wafers are arranged in a stacked manner having substantially the same space between adjacent wafers. Wafers may also be stacked in pairs that are back-to-back while carrying out this method. SA978005
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公开(公告)号：AU4871879A
公开(公告)日：1980-03-06
申请号：AU4871879
申请日：1979-07-06
Applicant: IBM
Inventor： DAVIES JOHN EDWARD , GALLI GUIDO
IPC: C30B19/06 , C30B19/10 , H01F41/28 , H01L21/208 , B01J17/06
Abstract: A method of forming an improved liquid phase epitaxial film on a wafer. The resultant film has improved uniformity of magnetic properties, such as the collapse field (Ho), across the surface of the wafer as well as being substantially free of mesa defects on the surface. The method includes the step of growing the liquid phase epitaxial film while the wafer is in the horizontal plane. The wafer is removed from the melt while the wafer is tilted at an angle from the horizontal plane so that the melt may drain from the wafer. Then the wafer is positioned in a horizontal plane again and rotated to remove the remaining melt droplets from the edge of the wafer. In a preferred embodiment, a plurality of wafers are positioned in a wafer holding means so that the wafers are arranged in a stacked manner having substantially the same space between adjacent wafers. Wafers may also be stacked in pairs that are back-to-back while carrying out this method.
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公开(公告)号：FR2296470A1
公开(公告)日：1976-07-30
申请号：FR7536064
申请日：1975-11-19
Applicant: IBM
Inventor： CHIOU CHARLES , GALLI GUIDO , LOEFFLER KARL H , LORENZ MAX R
Abstract: 1493667 Ink jets INTERNATIONAL BUSINESS MACHINES CORP 27 Oct 1975 [31 Dec 1974] 43996/75 Heading B6P A nozzle structure for an ink jet includes a monocrystalline semi-conducting substrate 20 with an array of passages 21 (only one shown), and a layer 22 of uniform thickness overlying the substrate with orifices 23, each passage 21 is associated with an orifice 23 and their central axes are aligned. As shown a silicon substrate 20 receives a layer 22 (silicon dioxide or nitride) by vapour deposition, sputtering or thermal oxide growth. In step C a mask 35 is applied to control the anisotropic etching to produce passage 21 (step D). The orifice 23 can be produced by chemical/ sputter/ion/plasma etch through a mask 36.
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