公开(公告)号：SG85714A1

公开(公告)日：2002-01-15

申请号：SG200003913

申请日：2000-07-13

Applicant: IBM

Inventor： GARY BELA BRONNER ,  JEFFREY PETER GAMBINO ,  CARL J RADENS

IPC: H01L21/027 ,  H01L21/28 ,  H01L21/304 ,  B24B37/04 ,  H01L21/8234 ,  H01L27/088 ,  H01L27/10 ,  H01L21/70 ,  H01L21/335

Abstract: A method of forming a semiconductor device, including forming a substrate with a memory array region and a logic device region, growing a thick gate dielectric over the substrate, forming a gate stack, including a first polysilicon layer, over the thick gate dielectric for the memory array region, forming a thin gate dielectric on the substrate over the logic device region, wherein layers of the gate stack in the memory array region protect the thick gate oxide during the forming of the thin gate dielectric, forming a second polysilicon layer for the gate stack in the logic device region, to produce a resulting structure, wherein a thickness of the second polysilicon layer is at least as thick as the gate stack in the memory array region, planarizing the structure using chemical mechanical polishing (CMP), and patterning the gate stacks in said memory array region and the logic device region.

公开(公告)号：SG84601A1

公开(公告)日：2001-11-20

申请号：SG200002902

申请日：2000-05-26

Applicant: IBM

Inventor： JACK ALLAN MANDELMAN ,  GARY BELA BRONNER ,  RAMACHANDRA DIVAKARUNI

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/088 ,  H01L27/092 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78 ,  H01L21/22

Abstract: A method for providing dual work function doping and borderless array diffusion contacts includes providing a semiconductor substrate, a gate insulator, a conductor on the gate insulator, an insulating cap on the conductor and insulating spacers on sidewalls of a portion of the conductor and the insulating cap. The method also includes doping portions of the semiconductor substrate and the conductor with a first conductive type and other portions with a second conductive type. The conductor may be annealed such that dopants of the first and second conductive types spread over the respective conductors.