公开(公告)号：MY126213A

公开(公告)日：2006-09-29

申请号：MYPI20021589

申请日：2002-04-30

Applicant: IBM

Inventor： GATES STEPHEN MCCONELL ,  MURRAY CHRISTOPHER B ,  NITTA SATYANARAYANA V ,  PURUSHOTHAMAN SAMPATH

IPC: B32B3/10 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: A POROUS, LOW-K DIELECTRIC FILM THAT HAS GOOD MECHANICAL PROPERTIES AS WELL AS A METHOD OF FABRICATING THE FILM AND THE USE OF THE FILM AS A DIELECTRIC LAYER BETWEEN METAL WIRING FEATURES ARE PROVIDED . THE POROUS, LOW-K DIELECTRIC FILM INCLUDES A FIRST PHASE OF MONODISPERSED PORES HAVING A DIAMETER OF FROM ABOUT 1 TO ABOUT 10 NM THAT ARE SUBSTANTIALLY UNIFORMLY SPACED APART AND ARE ESSENTIALLY LOCATED ON SITES OF A THREE-DIMENSIONAL PERIODIC LATTICE; AND A SECOND PHASE WHICH IS SOLID SURROUNDING THE FIRST PHASE. SPECIFICALLY, THE SECOND PHASE OF THE FILM INCLUDES (i) AN ORDERED ELEMENT THAT IS COMPOSED OF NANOPARTICLES HAVING A DIAMETER OF FROM ABOUT 1 TO ABOUT 10 NM THAT ARE SUBSTANTIALLY UNIFORMLY SPACED APART AND ARE ESSENTIALLY ARRANGED ON SITES OF A THREE-DIMENSIONAL PERIODIC LATTICE, AND (ii) A DISORDERS ELEMENT COMPRISED OF A DIELECTRIC MATERIAL HAVING A DIELECTRIC CONSTANT OF ABOUT 2.8 OR LESS. (FIG 1A)