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公开(公告)号:MY126213A
公开(公告)日:2006-09-29
申请号:MYPI20021589
申请日:2002-04-30
Applicant: IBM
Inventor: GATES STEPHEN MCCONELL , MURRAY CHRISTOPHER B , NITTA SATYANARAYANA V , PURUSHOTHAMAN SAMPATH
IPC: B32B3/10 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532
Abstract: A POROUS, LOW-K DIELECTRIC FILM THAT HAS GOOD MECHANICAL PROPERTIES AS WELL AS A METHOD OF FABRICATING THE FILM AND THE USE OF THE FILM AS A DIELECTRIC LAYER BETWEEN METAL WIRING FEATURES ARE PROVIDED . THE POROUS, LOW-K DIELECTRIC FILM INCLUDES A FIRST PHASE OF MONODISPERSED PORES HAVING A DIAMETER OF FROM ABOUT 1 TO ABOUT 10 NM THAT ARE SUBSTANTIALLY UNIFORMLY SPACED APART AND ARE ESSENTIALLY LOCATED ON SITES OF A THREE-DIMENSIONAL PERIODIC LATTICE; AND A SECOND PHASE WHICH IS SOLID SURROUNDING THE FIRST PHASE. SPECIFICALLY, THE SECOND PHASE OF THE FILM INCLUDES (i) AN ORDERED ELEMENT THAT IS COMPOSED OF NANOPARTICLES HAVING A DIAMETER OF FROM ABOUT 1 TO ABOUT 10 NM THAT ARE SUBSTANTIALLY UNIFORMLY SPACED APART AND ARE ESSENTIALLY ARRANGED ON SITES OF A THREE-DIMENSIONAL PERIODIC LATTICE, AND (ii) A DISORDERS ELEMENT COMPRISED OF A DIELECTRIC MATERIAL HAVING A DIELECTRIC CONSTANT OF ABOUT 2.8 OR LESS. (FIG 1A)