公开(公告)号：DE2817258A1

公开(公告)日：1978-11-09

申请号：DE2817258

申请日：1978-04-20

Applicant: IBM

Inventor： GEFFKEN ROBERT MICHAEL

IPC: H01L29/78 ,  H01L21/027 ,  H01L21/28 ,  H01L21/285 ,  H01L21/86 ,  H01L29/417 ,  H01L29/49 ,  H01L21/24

公开(公告)号：DE3276733D1

公开(公告)日：1987-08-13

申请号：DE3276733

申请日：1982-04-15

Applicant: IBM

Inventor： FARRAR PAUL ALDEN ,  GEFFKEN ROBERT MICHAEL ,  KROLL CHARLES THOMAS

IPC: H01L23/522 ,  H01L21/027 ,  H01L21/28 ,  H01L21/768 ,  H01L21/90

Abstract: A method for providing high density multiple level metallurgy for integrated circuit devices in which a relatively thin layer of plasma produced silicon nitride (24) is deposited over a first level of interconnection metallurgy (22) formed on a layer of silicon oxide. Overlap via holes are etched in the nitride layer followed by deposition of a thicker layer of polyimide forming polymer (28). A second set of via holes (29) larger than the first are provided in the polymer layer (28) and a second layer of interconnection metallurgy (30) is then deposited by a lift-off deposition technique.