公开(公告)号：DE69415476T2

公开(公告)日：1999-07-15

申请号：DE69415476

申请日：1994-10-06

Applicant: IBM

Inventor： GEISS PETER JOHN ,  LICATA THOMAS JOHN ,  HO HERBERT LEI ,  RYAN JAMES GARDNER

IPC: H01L21/28 ,  C30B1/00 ,  H01L21/223 ,  H01L21/225 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  C30B29/10 ,  C30B1/02

Abstract: A process for forming an epitaxial cobalt silicide (CoSi2) film in a semiconductor device, comprises: (a) forming on the Si substrate (10) a layer of refractory metal (12) comprising W, Cr, Mo or mixts. or silicides thereof; (b) forming a Co layer (14); and (c) annealing the Co layer at a temp. high enough to form epitaxial CosI2 film (16) overlying the substrate. A process for forming epitaxial CoSi2 by forming a W layer, followed by a Co layer, on a Si substrate, followed by annealing at 550[deg]C. for a time long enough to form epitaxial CoSi2.

公开(公告)号：DE69415476D1

公开(公告)日：1999-02-04

申请号：DE69415476

申请日：1994-10-06

Applicant: IBM

Inventor： GEISS PETER JOHN ,  LICATA THOMAS JOHN ,  HO HERBERT LEI ,  RYAN JAMES GARDNER

IPC: H01L21/28 ,  C30B1/00 ,  H01L21/223 ,  H01L21/225 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  C30B29/10 ,  C30B1/02

Abstract: A process for forming an epitaxial cobalt silicide (CoSi2) film in a semiconductor device, comprises: (a) forming on the Si substrate (10) a layer of refractory metal (12) comprising W, Cr, Mo or mixts. or silicides thereof; (b) forming a Co layer (14); and (c) annealing the Co layer at a temp. high enough to form epitaxial CosI2 film (16) overlying the substrate. A process for forming epitaxial CoSi2 by forming a W layer, followed by a Co layer, on a Si substrate, followed by annealing at 550[deg]C. for a time long enough to form epitaxial CoSi2.