公开(公告)号：JPH1041465A

公开(公告)日：1998-02-13

申请号：JP10727497

申请日：1997-04-24

Applicant: IBM ,  SIEMENS AG

Inventor： DOBUZINSKY DAVID MARK ,  FUGARDI STEPHEN GERARD ,  HAMMERL ERWIN ,  HO HERBERT LEI ,  RAMAC SAMUEL C ,  STRONG ALVIN WAYNE

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822

Abstract: PROBLEM TO BE SOLVED: To manufacture a high resistance resistor by using materials and a method common the those used for the integrated circuit process. SOLUTION: As a method for manufacturing a resistor element for an integrated circuit semiconductor device, and insulation film 120 formed is silicon nitride and the like is deposited first. Then, a a film 130 containing titanium is deposited on the insulation film 120. The film 130 and the insulation film 120 are heat-treated so as the diffuse titanium in the insulation film 120. As a result, titanium is diffused in the insulation film 120. Thus, a resistor element with relatively high resistance is manufactured. The merit of this method is that it can be easily integrated with the conventional integrated circuit manufacturing technologies.

公开(公告)号：DE69737469T2

公开(公告)日：2007-11-29

申请号：DE69737469

申请日：1997-04-24

Applicant: SIEMENS AG ,  IBM

Inventor： DOBUZINSKY DAVID MARK ,  FUGARDI STEPHEN GERARD ,  HAMMERL ERWIN ,  HO HERBERT LEI ,  RAMAC SAMUEL C ,  STRONG ALVIN WAYNE

IPC: H01L21/3205 ,  H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8244

Abstract: According to the preferred embodiment of the present invention, an improved resistor and method of fabrication is provided. The method for fabricating a resistive element into an integrated circuit semiconductor device comprises the steps of: depositing a dielectric film, such as silicon nitride; depositing a titanium film upon the dielectric film; and annealing the titanium and dielectric films. This causes titanium to be diffused into the dielectric film. This creates a resistive element having a relatively high resistivity. The preferred embodiment method has the advantage of being easily integrated into conventional integrated circuit fabrication techniques.

公开(公告)号：DE69737469D1

公开(公告)日：2007-04-26

申请号：DE69737469

申请日：1997-04-24

Applicant: SIEMENS AG ,  IBM

Inventor： DOBUZINSKY DAVID MARK ,  FUGARDI STEPHEN GERARD ,  HAMMERL ERWIN ,  HO HERBERT LEI ,  RAMAC SAMUEL C ,  STRONG ALVIN WAYNE

IPC: H01L21/3205 ,  H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8244

Abstract: According to the preferred embodiment of the present invention, an improved resistor and method of fabrication is provided. The method for fabricating a resistive element into an integrated circuit semiconductor device comprises the steps of: depositing a dielectric film, such as silicon nitride; depositing a titanium film upon the dielectric film; and annealing the titanium and dielectric films. This causes titanium to be diffused into the dielectric film. This creates a resistive element having a relatively high resistivity. The preferred embodiment method has the advantage of being easily integrated into conventional integrated circuit fabrication techniques.

公开(公告)号：DE69504252T2

公开(公告)日：1999-04-22

申请号：DE69504252

申请日：1995-06-09

Applicant: IBM

Inventor： FAHEY PAUL MARTIN ,  MORIKADO MUTSUO ,  HAMMERL ERWIN ,  HO HERBERT LEI

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763

公开(公告)号：DE69415476T2

公开(公告)日：1999-07-15

申请号：DE69415476

申请日：1994-10-06

Applicant: IBM

Inventor： GEISS PETER JOHN ,  LICATA THOMAS JOHN ,  HO HERBERT LEI ,  RYAN JAMES GARDNER

IPC: H01L21/28 ,  C30B1/00 ,  H01L21/223 ,  H01L21/225 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  C30B29/10 ,  C30B1/02

Abstract: A process for forming an epitaxial cobalt silicide (CoSi2) film in a semiconductor device, comprises: (a) forming on the Si substrate (10) a layer of refractory metal (12) comprising W, Cr, Mo or mixts. or silicides thereof; (b) forming a Co layer (14); and (c) annealing the Co layer at a temp. high enough to form epitaxial CosI2 film (16) overlying the substrate. A process for forming epitaxial CoSi2 by forming a W layer, followed by a Co layer, on a Si substrate, followed by annealing at 550[deg]C. for a time long enough to form epitaxial CoSi2.

公开(公告)号：DE69415476D1

公开(公告)日：1999-02-04

申请号：DE69415476

申请日：1994-10-06

Applicant: IBM

Inventor： GEISS PETER JOHN ,  LICATA THOMAS JOHN ,  HO HERBERT LEI ,  RYAN JAMES GARDNER

IPC: H01L21/28 ,  C30B1/00 ,  H01L21/223 ,  H01L21/225 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  C30B29/10 ,  C30B1/02

Abstract: A process for forming an epitaxial cobalt silicide (CoSi2) film in a semiconductor device, comprises: (a) forming on the Si substrate (10) a layer of refractory metal (12) comprising W, Cr, Mo or mixts. or silicides thereof; (b) forming a Co layer (14); and (c) annealing the Co layer at a temp. high enough to form epitaxial CosI2 film (16) overlying the substrate. A process for forming epitaxial CoSi2 by forming a W layer, followed by a Co layer, on a Si substrate, followed by annealing at 550[deg]C. for a time long enough to form epitaxial CoSi2.

公开(公告)号：DE69504252D1

公开(公告)日：1998-10-01

申请号：DE69504252

申请日：1995-06-09

Applicant: IBM

Inventor： FAHEY PAUL MARTIN ,  MORIKADO MUTSUO ,  HAMMERL ERWIN ,  HO HERBERT LEI

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763