公开(公告)号：MY123561A

公开(公告)日：2006-05-31

申请号：MYPI20012196

申请日：2001-05-11

Applicant: IBM

Inventor： JOHN S KRESGE ,  FRANCIS J DOWNES JR ,  GERALD W JONES ,  CHERYL L TYTRAN-PALOMAKI ,  DAVID JANES ALCOE

IPC: H01L23/498 ,  H05K1/11 ,  H05K3/46

Abstract: A SEMICONDUCTOR CHIP CARRIER HAVING AN INCREASED CHIP CONNECTOR AND PLATED THROUGH HOLE DENSITY. IN PARTICULAR, A SUBSTRATE (100) HAVING A PLURALITY OF PLATED THROUGH HOLES (132) THEREIN, AND A FATIGUE RESISTANT REDISTRIBUTION LAYER (138) THEREON. THE REDISTRIBUTION LAYER INCLUDES A PLURALITY OF VIAS(140) SELECTIVELY POSITIONED OVER AND CONTACTING THE PLATED THROUGH HOLES.THE SUBSTRATE FURTHER INCLUDING A GROUND PLANE (112), TWO PAIR OF SIGNAL PLANES (116, 124), AND TWO PAIR OF POWER PLANES(120, 128), WHEREIN THE SECOND PAIR OF POWER PLANES ARE LOCATED DIRECTLY UNDERNEATH THE EXTERNAL DIELECTRIC LAYER. A BURIED PLATED THROUGH HOLE (146) WITHIN THE SUBSTRATE. (FIG.8A)

公开(公告)号：HK1040569B

公开(公告)日：2005-12-09

申请号：HK02101938

申请日：2002-03-13

Applicant: IBM

Inventor： DAVID J ALCOE ,  FRANCIS J DOWNES JR ,  GERALD W JONES ,  JOHN S KRESGE ,  CHERYL L TYTRAN-PALOMAKI

IPC: H01L20060101 ,  H01L23/498 ,  H05K20060101 ,  H05K3/46