公开(公告)号：AU3625189A

公开(公告)日：1990-01-04

申请号：AU3625189

申请日：1989-06-09

Applicant: IBM

Inventor： MEIER HEINZ PETER ,  WALTER WILLIE ,  GIESON EDWARD A VAN

IPC: H01L21/203 ,  H01L33/00 ,  H01S5/00 ,  H01S5/223 ,  H01S5/227 ,  H01S5/32 ,  C30B23/04 ,  C30B29/42 ,  H01S3/06

公开(公告)号：DE3877750D1

公开(公告)日：1993-03-04

申请号：DE3877750

申请日：1988-06-28

Applicant: IBM

Inventor： MEIER HEINZ PETER ,  GIESON EDWARD A VAN ,  WALTER WILLI

IPC: H01L21/203 ,  H01L33/00 ,  H01S5/00 ,  H01S5/223 ,  H01S5/227 ,  H01S5/32 ,  H01S3/19

Abstract: A process for the selective growth of GaAs on a patterned substrate for use in semiconductor laser diode prodn. comprises embedding the active quantum well (QW) of a ridge GaAs QW laser in the higher bandgap material by selective growth of the QW on the horizontal facet of the ridge structure, leaving the sidewall facets of the ridge exposed to the defintion of the higher bandgap cladding layers. The cladding layers pref. provide for both lateral carrier and current confinement.

公开(公告)号：DE3877750T2

公开(公告)日：1993-07-08

申请号：DE3877750

申请日：1988-06-28

Applicant: IBM

Inventor： MEIER HEINZ PETER ,  GIESON EDWARD A VAN ,  WALTER WILLI

IPC: H01L21/203 ,  H01L33/00 ,  H01S5/00 ,  H01S5/223 ,  H01S5/227 ,  H01S5/32 ,  H01S3/19

公开(公告)号：AU618100B2

公开(公告)日：1991-12-12

申请号：AU3625189

申请日：1989-06-09

Applicant: IBM

Inventor： MEIER HEINZ PETER ,  WALTER WILLIE ,  GIESON EDWARD A VAN

IPC: H01L21/203 ,  H01L33/00 ,  H01S5/00 ,  H01S5/223 ,  H01S5/227 ,  H01S5/32 ,  C30B23/04 ,  C30B29/42 ,  H01S3/06 ,  H01S3/19

公开(公告)号：MX169915B

公开(公告)日：1993-07-30

申请号：MX1658489

申请日：1989-06-23

Applicant: IBM

Inventor： MEIER HEINZ PETER ,  GIESON EDWARD A VAN ,  WALTER WILLI

IPC: H01L21/203 ,  H01L33/00 ,  H01S5/00 ,  H01S5/223 ,  H01S5/227 ,  H01S5/32 ,  H01S3/19 ,  C30B29/28