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公开(公告)号：DE3877750T2
公开(公告)日：1993-07-08
申请号：DE3877750
申请日：1988-06-28
Applicant: IBM
Inventor： MEIER HEINZ PETER , GIESON EDWARD A VAN , WALTER WILLI
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公开(公告)号：MX169915B
公开(公告)日：1993-07-30
申请号：MX1658489
申请日：1989-06-23
Applicant: IBM
Inventor： MEIER HEINZ PETER , GIESON EDWARD A VAN , WALTER WILLI
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公开(公告)号：CA1314088C
公开(公告)日：1993-03-02
申请号：CA601602
申请日：1989-06-02
Applicant: IBM
Inventor： MEIER HEINZ P , VAN GIESON EDWARD A , WALTER WILLI
Abstract: SZ 9-88-008 The process is particularly useful in the fabrication of GaAs quantum well (QW) laser diodes. Starting point is a ridge-patterned (100)-substrate (21), the crystal orientation of the sidewalls, e.g., (411A)-oriented, being different from that of the horizontal top. The sidewall facets thus have a lower Ga incorporation rate. In a molecular beam epitaxy (MBE) system, the lower AlGaAs cladding layer (22) is first grown, followed by the high-temperature growth of the active GaAs QW (23). Due to diffusion and desorption processes, the GaAs thickness at the sidewalls is smaller than on the horizontal top of the ridge. During a short growth interrupt, the GaAs completely desorps from the sidewall facets. With the subsequent growth of the upper cladding layer (24), the QW becomes laterally embedded in higher bandgap material providing for lateral electric confinement.
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公开(公告)号：DE3877750D1
公开(公告)日：1993-03-04
申请号：DE3877750
申请日：1988-06-28
Applicant: IBM
Inventor： MEIER HEINZ PETER , GIESON EDWARD A VAN , WALTER WILLI
Abstract: A process for the selective growth of GaAs on a patterned substrate for use in semiconductor laser diode prodn. comprises embedding the active quantum well (QW) of a ridge GaAs QW laser in the higher bandgap material by selective growth of the QW on the horizontal facet of the ridge structure, leaving the sidewall facets of the ridge exposed to the defintion of the higher bandgap cladding layers. The cladding layers pref. provide for both lateral carrier and current confinement.
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