公开(公告)号：CA1250669A1

公开(公告)日：1989-02-28

申请号：CA549183

申请日：1987-10-13

Applicant: IBM

Inventor： GIAMMARCO NICHOLAS J ,  GIMPELSON ALEXANDER ,  KAPLITA GEORGE A ,  LOPATA ALEXANDER D ,  SCADUTO ANTHONY F ,  SHEPARD JOSEPH F

IPC: H01L21/302 ,  G03F7/40 ,  H01L21/027 ,  H01L21/033 ,  H01L21/266 ,  H01L21/30 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/70

Abstract: Disclosed is a process for reducing lithographic image size for integrated circuit manufacture. A mask of photosensitive material having an opening of a minimum size dictated by the limits of lithography is formed on a substrate. Reduction in the image size is achieved by establishing sidewalls to the interior vertical surfaces of the opening by depositing a conformal layer, followed by anisotropic etching. The dimension of the opening is reduced by the combined thickness of the two opposite insulator sidewalls. In a specific direct application of the disclosed process, a photomask/stencil having a pattern of openings of a minimum size smaller than possible by lithography, per se, is formed.