公开(公告)号：FR2290757A1

公开(公告)日：1976-06-04

申请号：FR7529327

申请日：1975-09-19

Applicant: IBM

Inventor： GOULA ROBERT A ,  RAIDER STANLEY I ,  REVITZ MARTIN

IPC: H01L21/28 ,  H01L21/3105 ,  H01L21/18 ,  H01L29/78

Abstract: Method of mfr. and stabilisation of a gate dielectric layer in MOS devices in order to reduce the fixed oxide charge in the gate duelectric layer without degrading the characteristic of the layer comprises forming a layer of >=1 SiO2, layer 500A thick on >=1 region of the gate by thermal oxidation of the monocrystalline silicon substrate and reheating the substrate in an atmosphere of He, Ne, Ar, Kr, or Xe, at 900 degrees C for >=10 mins. The gate dielectric layer is 100-300 A thick. The substrate is heated at 900-1100 degrees C for 9 mins to 100 hrs. pref. at 950-1050 degrees C for 15 mins to 24 hrs. in argon. The heat treatment in inert gas reduces the state of charge of the surface while N2 does not.