公开(公告)号：US3733526A

公开(公告)日：1973-05-15

申请号：US3733526D

申请日：1970-12-31

Applicant: IBM

Inventor： ANACHER W ,  GREBE K ,  GREINER J ,  LAHIRI S ,  PARK K ,  ZAPPE H

IPC: H01L27/00 ,  H01L39/22 ,  H01L3/10

CPC classification number: H01L39/223 ,  H01L27/00 ,  Y10S505/874

Abstract: A superconducting Josephson junction tunnel device having in particular lead alloy electrodes (Pb-In and Pb-In-Sn) and a very precisely defined and dense tunnel barrier comprising an oxide of the lead alloy electrode. Such devices can be thermally cycled between liquid helium temperatures and room temperatures, and provide large tunnelling currents.

Abstract translation: 具有特别是铅合金电极（Pb-In和Pb-In-Sn）的超导约瑟夫逊结隧道装置和包含铅合金电极的氧化物的非常精确地限定且致密的隧道势垒。 这样的器件可以在液氦温度和室温之间热循环，并提供大的隧穿电流。

公开(公告)号：US3849276A

公开(公告)日：1974-11-19

申请号：US12599371

申请日：1971-03-19

Applicant: IBM

Inventor： GREINER J

IPC: C23C8/36 ,  H01L21/311 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L23/29 ,  H01L27/00 ,  H01L39/24 ,  C23C13/00 ,  C23C15/00

CPC classification number: H01L39/24 ,  C23C8/36 ,  H01L21/31105 ,  H01L21/314 ,  H01L21/31654 ,  H01L21/31683 ,  H01L21/3185 ,  H01L23/29 ,  H01L23/291 ,  H01L27/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming reactive layers on materials where the final thickness of the reactive layer is independent of time after an initial time period in which the final thickness is attained. Films are grown by a process, such as oxidation, and are removed simultaneously by a process, such as sputtering. The parameters of the growth process and removal process are initially fixed so that at a desired final thickness, the growth rate is equal to the removal rate. When this steady-state equilibrium is reached, the thickness of the reactive layer will remain constant, independent of time. The reactive layer can be grown to the desired thickness by this method, or a thicker layer can be reduced to a lesser final thickness by this method. Very small (less than 50A) films of excellent quality can be made.

公开(公告)号：CA936625A

公开(公告)日：1973-11-06

申请号：CA130471

申请日：1971-12-20

Applicant: IBM

Inventor： GREBE K ,  LAHIRI S ,  ANACKER W ,  PARK K ,  GREINER J ,  ZAPPE H

IPC: H01L27/00 ,  H01L39/22

Abstract: A superconducting Josephson junction tunnel device having in particular lead alloy electrodes (Pb-In and Pb-In-Sn) and a very precisely defined and dense tunnel barrier comprising an oxide of the lead alloy electrode. Such devices can be thermally cycled between liquid helium temperatures and room temperatures, and provide large tunnelling currents.