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公开(公告)号：US3758795A
公开(公告)日：1973-09-11
申请号：US3758795D
申请日：1972-06-30
Applicant: IBM
CPC classification number: H03K19/1952 , H03K3/38 , Y10S505/865
Abstract: Superconductive circuitry using a first Josephson tunneling device connected to a transmission line having a termination such that no reflections result when the Josephson tunneling diode switches between two stable voltage states, in accordance with applied input signals. Means are provided for producing the input signals to switch the first Josephson tunneling device and further Josephson tunneling devices are provided whose voltage state depends on the current pulse delivered to the transmission line when the first Josephson tunneling device switches from a first voltage state to a second voltage state. Logic circuitry is shown using this structure, as well as fan-in and fan-out Josephson tunneling device circuits.
Abstract translation: 超导电路使用连接到具有端接的传输线的第一约瑟夫逊隧道装置，使得当约瑟夫森隧道二极管根据所施加的输入信号在两个稳定的电压状态之间切换时不产生反射。 提供用于产生输入信号以切换第一约瑟夫森隧道装置的装置，并且提供另外的约瑟夫森隧道装置，其中当第一约瑟夫森隧道装置从第一电压状态切换到第二电压状态时，其电压状态取决于输送到传输线的当前脉冲 电压状态。 使用这种结构示出逻辑电路，以及扇入和扇出的约瑟夫逊隧道装置电路。
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公开(公告)号：CA936625A
公开(公告)日：1973-11-06
申请号：CA130471
申请日：1971-12-20
Applicant: IBM
Abstract: A superconducting Josephson junction tunnel device having in particular lead alloy electrodes (Pb-In and Pb-In-Sn) and a very precisely defined and dense tunnel barrier comprising an oxide of the lead alloy electrode. Such devices can be thermally cycled between liquid helium temperatures and room temperatures, and provide large tunnelling currents.
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公开(公告)号：SE360201B
公开(公告)日：1973-09-17
申请号：SE985369
申请日：1969-07-11
Applicant: IBM
Inventor： ANACKER W
IPC: G11C11/44 , H01L39/22 , H03K19/195
Abstract: 1,244,518. Super-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 27 June, 1969 [15 July, 1968], No. 32500/69. Heading H1K. [Also in Division H3] An information storage cell comprises a pair of Josephson tunnelling devices connected to an input portion, and switch means for switching either one of the pair of devices from the novoltage state (electron pair tunnelling) to the voltage state (single-electron tunnelling). As shown, Fig. 2, a memory cell 10 comprises a word line 12 in which is formed a loop having two identical arms 14, 16, each containing a Josephson junction 18, 20. A bit line 22 passes, over the junctions 18, 20 and a sense line 24 passes under part of the loop remote from the junctions 18, 20 and is provided with a gate in the form of a Josephson junction 26 underlying the loop arm 16. In the rest condition a persistent current circulates in the loop the clockwise and anticlockwise directions representing the " 1 " and " 0 " states respectively. A current IW applied to the word line 12 divides equally between the arms 14, 16 and combines with the stored current resulting in a large net current in one arm in the direction of the stored current and a small net current in the other arm in the opposite direction (IW is greater than the stored current). If a current IB is simultaneously applied to the bit line 22 the critical current of the Josephson junction in the loop arm carrying the large net current will be exceeded and junction will switch to the voltage state if the bit current is in the same direction as the net current. The current is redistributed in the cell resulting in a reversal of the circulating current direction in the loop. If the large net loop arm current and the bit line current are in opposite directions no switching occurs and the circulating current remains unchanged. The final state of the cell is therefore changed to a state corresponding to a circulation direction opposite to the direction of the bit current or allowed to remain in this state depending on the initial state of the cell so that a desired input can be written into the cell. The cell is non-destructively read by applying the word current IW to the line 12 and a sense current to line 24 in a direction from right to left in the Figure. If a " 1 " is stored in the loop a large net current flows in arm 16 and since it is in the same direction as the sense current the Josephson junction 26 in the sense line is switched to its voltage state to provide an output signal. If a " 0 " is stored in the loop the current in arm 16 is small and junction 26 remains in the super-conductive state. The cell may be produced by evaporating a ground plane of super-conductor material on to an insulating substrate, depositing an insulating layer by evaporation or RF sputtering, depositing the bottom portions of the sense line and loop arms through a mask, performing a controlled oxidation or deposition of insulation to form the thin insulating layers for the Josephson junctions and depositing super-conductor material and insulating material alternately to complete the required structure. The superconductor material may be Pb, Sn, Nb or Ta. A Josephson junction decoding tree is described, Fig. 6 (not shown), and such decoders may be combined with a matrix of memory cells to form a random access store, Fig. 7 (not shown). The complete store may be formed on a single substrate by simultaneous deposition.
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