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1.发明授权Masking of deposited thin films by use of a masking layer photoresist composite 失效使用掩蔽层光电复合材料掩埋沉积薄膜
公开(公告)号：US3849136A
公开(公告)日：1974-11-19
申请号：US38434973
申请日：1973-07-31
Applicant: IBM
Inventor： GREBE K
IPC: H05K3/46 , C23F1/00 , G03F1/08 , G03F7/095 , H01L21/00 , H01L21/306 , H01L49/02 , H05K3/04 , H05K3/14 , G03C5/00 , B44D1/18
Abstract: A method and structure for use in depositing thin films which avoids edge-tearing of the films. The structure is a composite comprising a photosensitive layer (photoresist) on the substrate onto which deposition is to occur, and an overlaying masking layer (which is conveniently a metal such as aluminum). Apertures in the photoresist layer and the masking layer expose portions of the substrate. The masking layer acts as a deposition mask which is spaced away from the substrate at a distance equal to the thickness of the underlying photoresist layer. The photoresist layer acts to keep the masking layer in close proximity to the substrate and is patterned through the use of the overlying masking layer as an exposure mask. Recession of the edges of the photoresist layer is achieved by overexposure and subsequent development. In this manner, the masking layer overhangs the photoresist layer, thereby providing an undercut in order to prevent edge-tearing of deposited films.
Abstract translation: 用于沉积薄膜的方法和结构，其避免了膜的边缘撕裂。 该结构是包括在其上要沉积的基底上的感光层（光致抗蚀剂）和覆盖掩模层（其方便地是诸如铝的金属）的复合材料。 光致抗蚀剂层和掩模层中的孔暴露衬底的部分。 掩模层用作沉积掩模，该沉积掩模以等于下面光致抗蚀剂层的厚度的距离与衬底间隔开。 光致抗蚀剂层用于将掩模层保持在靠近衬底的位置，并通过使用覆盖掩模层作为曝光掩模进行图案化。 光致抗蚀剂层的边缘的衰退通过过度曝光和随后的显影实现。 以这种方式，掩模层突出于光致抗蚀剂层，从而提供底切以防止沉积膜的边缘撕裂。
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公开(公告)号：US3733526A
公开(公告)日：1973-05-15
申请号：US3733526D
申请日：1970-12-31
Applicant: IBM
CPC classification number: H01L39/223 , H01L27/00 , Y10S505/874
Abstract: A superconducting Josephson junction tunnel device having in particular lead alloy electrodes (Pb-In and Pb-In-Sn) and a very precisely defined and dense tunnel barrier comprising an oxide of the lead alloy electrode. Such devices can be thermally cycled between liquid helium temperatures and room temperatures, and provide large tunnelling currents.
Abstract translation: 具有特别是铅合金电极（Pb-In和Pb-In-Sn）的超导约瑟夫逊结隧道装置和包含铅合金电极的氧化物的非常精确地限定且致密的隧道势垒。 这样的器件可以在液氦温度和室温之间热循环，并提供大的隧穿电流。
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公开(公告)号：SE324805B
公开(公告)日：1970-06-15
申请号：SE640363
申请日：1963-06-10
Applicant: IBM
Inventor： BROWNLOW J , GREBE K
Abstract: 997,326. Magnetic storage apparatus. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 26, 1963 [June 29, 1962], No. 25327/63. Heading H3B. [Also in Division HI] A magnetic storage array is manufactured by coating conductive wires with successive layers of wax and a ferrite resin mixture, mounting the wires in parallel alignment in two open frames, orienting the frames so that the wires are orthogonal, pressing the frames together so that the wire coatings adhere, cutting the wires away from the frames after partial curing has taken place and finally sintering the ferrite at higher temperatures. The wax and resin are burnt away during the sintering process, the wax providing a space between the wires and the surrounding ferrite which prevents fracturing of the magnetic material. The co-ordinate wires may be positioned either as shown in Fig. 1A or Fig. 2, the latter arrangement providing a web of ferrite 3 between the wires 4, 5 at each crossing point. Where more than one wire is provided in each co-ordinate at each crossing point, these wires are insulated and twisted together in Fig. 3 (not shown). Depending on the materials used, the suggested temperatures for the process are 25-150‹ C. for partial curing, increasing to 100-150‹ C. to melt the wax coating. The temperature is then raised, firstly to 600‹ C. to remove the resin and plasticizer and then to 900-1400‹ C. to sinter the ferrite. Annealed platinum, palladium, silver or copper may be used for the wires, and the wax coating may be either natural or synthetic such as beeswax, carnauba wax, polyethylene wax or paraffin wax. Other suitable wax-like substances are polyvinyl acetate, polyvinyl chloride and their copolymers. The ferrite resin comprises 40-80% by weight of calcinated ferrite powder, 5-60% of thermosetting resin plus catalyst and 0-30% of plasticizers. Suitable ferrite powders exhibiting the required rectangular hystesis loop are Fe 1 . 83 Mn 1 . 08 Cu. 09 O 4 , Fe 1 . 68 Mn 1 . 25 Cr. 06 Ni. 03 O 4 , Fe 1 . 7 Mn. 6 Mg. 7 O 4 , and Fe 1 . 65 Mn 0 . 95 Cr. 10 Zn. 25 Cu. 02 O 4 . The resins may be epoxy resins, polyester resins, melamine-formaldehyde resins or phenol aldehyde resins. Suitable catalysts for the resins are described, and examples of various viscosity control agents are given such as pine and castor oils, butyl glycidyl ether or a 1: 1 mixture of methyl ethyl ketone and amyl acetate. A modification is described in which rayon fibres are used instead of certain of the wires, the fibres being burnt out by the heat treatment to provide a hollow ferrite structure through which pluralities of metallic conductors are later threaded.
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Patent Agency Ranking
公开(公告)号：CA936625A
公开(公告)日：1973-11-06
申请号：CA130471
申请日：1971-12-20
Applicant: IBM
Abstract: A superconducting Josephson junction tunnel device having in particular lead alloy electrodes (Pb-In and Pb-In-Sn) and a very precisely defined and dense tunnel barrier comprising an oxide of the lead alloy electrode. Such devices can be thermally cycled between liquid helium temperatures and room temperatures, and provide large tunnelling currents.
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公开(公告)号：SE339518B
公开(公告)日：1971-10-11
申请号：SE1756566
申请日：1966-12-22
Applicant: IBM
Inventor： GREBE K , BARTKUS E , BROWNLOW J
Abstract: 1,137,288. Magnetic data-storage apparatus. INTERNATIONAL BUSINESS MACHINES CORP. 10 Nov., 1966 [23 Dec.; 1965], No. 50346/66. Heading H3B. [Also in Divisions D1 and H1] A storage device is produced by forming a layer of green magnetic ferrite around a cylindrical substrate, surrounding this layer with a green non-magnetic ferrite, slicing both ferrites, and sintering the slices. The magnetic ferrite may be Fe 1 . 62 Mn 0 . 80 Cu 0 . 45 Zn 0 . 10 Bi 0 . 02 La 0 . 01 O 4 and may be prepared by ball-milling a mixture of Fe, Cu, Zn and Bi oxides, MnCO 3 , and LaFeO 3 , passing it through a 20-mesh screen, calcining at 650‹ C., remilling, passing it through a 325-mesh screen, and drying. The non-magnetic ferrite may be Fe 1 . 2 Mn 0 . 78 Cu 0 . 3 Zn 0 . 7 Bi 0 . 02 0 4 or Fe 0 . 8 Mn 1 . 48 Cu 0 . 2 Zn 0 . 5 Bi 0 . 02 O 4 . A barrier layer, e.g. of Mn 3 O 4 , Cr 2 O 3 , Mn 3 O 4 + Cr 2 O 3 or Mn 3 O 4 +ZnO, may be provided between the two ferrites. The substrate may be a nylon filament which may be coated with a release agent, e.g. colloidal wax in water, and removed by pulling from one end. The magnetic and barrier layers may be applied by passing a continuous length of the filament through a suspension of the material and then passing it twice through an oven (at 70‹ and 80‹ C., using a nitrocellulose-amyl acetate solution, and at 100‹ and 110‹ C., using an epoxy resin solution); this process is repeated five times and the filament is then passed through an oven (at 85‹ or 125‹ C. resp.) 10 times. The structure may then be similarly coated with the non- magnetic ferrite, and a number of such structures cast in a wax or polyethylene block; the filament is then removed, the block sliced, and the wax melted off by heating to 100- 125‹ C. Alternatively, the structures may be cast in a block of the non-magnetic ferrite, which is dried at 90‹ C. in the mould and then at 100‹ C.; the filament is removed; and the block is then sliced either perpendicular to or along the axes of the cores (in the latter case the two halves are turned through 90 degrees before firing). Firing may be effected in a Ni boat coated with Mn 3 O 4 , initially at 600‹ C. to drive off the binder, and then at 920‹ C. The magnetic layer may have an inner diameter of 3 or 4À5 mils.
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公开(公告)号：SE315311B
公开(公告)日：1969-09-29
申请号：SE74864
申请日：1964-01-22
Applicant: IBM
Inventor： BARTKUS E , BROWNLOW J , ELFANT R , GREBE K
Abstract: 1,023,627. Magnetic storage devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Oct. 26, 1964 [Nov. 21, 1963], No. 43506/64. Addition to 998,891. Heading H3B. [Also in Division H1] The tubular storage device described in the parent Specification is modified by the use of hole pairs for the conductors B in the form of two parallel slits 18 arranged longitudinally of the tube 12, each conductor B being made of strip material. The tube is formed by a magnetic U-shaped trough 14 and a magnetic closure plate 16, the same or different materials being used. The magnetization characteristic of the magnetic material need not be rectangular.
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