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公开(公告)号:JPH07281864A
公开(公告)日:1995-10-27
申请号:JP2913695
申请日:1995-02-17
Applicant: IBM
Inventor: GROSSMAN BERTRAND M , MCLEAN JAMES GORDON , PICKOVER CLIFFORD A , SCHWARTZ MICHAEL STEPHEN , WINARSKI DANIEL JAMES
Abstract: PURPOSE: To provide a method and device to facilitate selection of icon. CONSTITUTION: In order to facilitate selection of icon, an icon possibly in use next is moved automatically toward a cursor. Since an icon possibly in use or other icon selected by the user traces the cursor, the icons are always in existence near the cursor and any of them is easily selected. Furthermore, an icon capable of announcing (notifying) itself is provided when the cursor approaches the vicinity of the icon. In order to clear up a computer display device, icons whose availability is very small are made thin, or erased or is reduced for the sizes. In addition, icons with small use of frequency are linked with a visual graphic. Thus, the number of clutters (congestion) on a computer display screen is reduced.
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公开(公告)号:JP2000081939A
公开(公告)日:2000-03-21
申请号:JP24486599
申请日:1999-08-31
Applicant: IBM
Inventor: GROSSMAN BERTRAND M , MCLEAN JAMES G , PICKOVER CLIFFORD A , SCHWARTZ MICHAEL S , WINARSKI DANIEL J
Abstract: PROBLEM TO BE SOLVED: To easily select icons among plural icons which are placed in a computer display by integrating plural related icons in a master icon so that the integrated icons are concealed from a visual field. SOLUTION: First, whether the icons to be extinguished exist or not, namely, whether the icons to be integrated in the master icon exist or not is decided in an inquiry step 70 as 'do the icons to be extinguished exist?'. When one or more icons are decided to be integrated, the icons are extinguished in a step 72 and the master icons are graphically changed if necessary. Thus, easier and more prompt selection of specified icons is enabled by assisting a computer user to operate the icons by a manual work via a complicated task in the computer display.
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公开(公告)号:JP2000081938A
公开(公告)日:2000-03-21
申请号:JP24485999
申请日:1999-08-31
Applicant: IBM
Inventor: GROSSMAN BERTRAND M , MCLEAN JAMES G , PICKOVER CLIFFORD A , SCHWARTZ MICHAEL S , WINARSKI DANIEL J
Abstract: PROBLEM TO BE SOLVED: To more promptly select specified icons by assisting a manual work via a complicated task by deciding what icons among plural icons is linked and drawing graphic display among the icons to be linked. SOLUTION: First, decision regarding what icons are linked is performed in a step 90 'to decide what icons are linked'. After that, decision to draw the graphic display among these icons is performed in a step 92 'to draw the graphic display between the icons'. Finally, decision whether new icons exist in the display or not is performed in an inquiry step 94 as 'is the new icons are displayed?' Thus, easy and prompt selection of the specified icons by assisting a computer user to operate the icons by the manual work via the complicated task.
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公开(公告)号:DE69613031T2
公开(公告)日:2001-10-25
申请号:DE69613031
申请日:1996-02-13
Applicant: IBM
Inventor: GROSSMAN BERTRAND M , PICKOVER CLIFFORD A
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公开(公告)号:DE69526880D1
公开(公告)日:2002-07-11
申请号:DE69526880
申请日:1995-03-01
Applicant: IBM
Inventor: GROSSMAN BERTRAND M , MCLEAN JAMES GORDON , PICKOVER CLIFFORD A , SCHWARTZ MICHAEL STEPHEN , WINARSKI DANIEL JAMES
Abstract: A method and system for facilitating the selection of icons. In order to reduce the amount of clutter on a computer display so that icons may be easily selected. In order to clean up a computer display, icons which are least likely to be used are faded, eliminated or shrunk to a smaller size. In another embodiment, icons that are not used very often may disappear into a master icon and further, icons which have a conceptual relationship between them may be linked by a visual graphical representation.
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公开(公告)号:DE69613031D1
公开(公告)日:2001-07-05
申请号:DE69613031
申请日:1996-02-13
Applicant: IBM
Inventor: GROSSMAN BERTRAND M , PICKOVER CLIFFORD A
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公开(公告)号:DE3567320D1
公开(公告)日:1989-02-09
申请号:DE3567320
申请日:1985-06-13
Applicant: IBM
Inventor: FANG FRANK FU , GROSSMAN BERTRAND M , HWANG WEI
IPC: H01L29/78 , H01L21/033 , H01L21/265 , H01L21/28 , H01L21/336 , H01L29/423 , H01L21/00
Abstract: A semiconductor device, particularly an ultra-short gate MOSFET, is formed by depositing a mask (6) at a low angle with respect to a planar surface and then performing an angular conductivity conversion operation, such as ion implantation, so that the converted region extends (9) partially under the mask. The mask is then removed and a gate electrode (12) is deposited in its place, the gate being smaller than the channel length (11) from the source (7) to the point (9) where the conversion extended under the mask. Straggle location change is accommodated by arranging that the mask has a dimension along a line parallel to the planar surface which is greater than the desired channel length.
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公开(公告)号:DE69526880T2
公开(公告)日:2003-01-23
申请号:DE69526880
申请日:1995-03-01
Applicant: IBM
Inventor: GROSSMAN BERTRAND M , MCLEAN JAMES GORDON , PICKOVER CLIFFORD A , SCHWARTZ MICHAEL STEPHEN , WINARSKI DANIEL JAMES
Abstract: A method and system for facilitating the selection of icons. In order to reduce the amount of clutter on a computer display so that icons may be easily selected. In order to clean up a computer display, icons which are least likely to be used are faded, eliminated or shrunk to a smaller size. In another embodiment, icons that are not used very often may disappear into a master icon and further, icons which have a conceptual relationship between them may be linked by a visual graphical representation.
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公开(公告)号:DE3676536D1
公开(公告)日:1991-02-07
申请号:DE3676536
申请日:1986-04-11
Applicant: IBM
Inventor: FANG FRANK FU , GROSSMAN BERTRAND M
IPC: H01L29/78 , H01L21/033 , H01L21/28 , H01L21/336 , H01L21/8236 , H01L29/41 , H01L29/423 , H01L21/00 , H01L29/10 , H01L29/60
Abstract: A semiconductor device (Field Effect Transistor) is fabricated by coating a wafer with oxygen impervious silicon nitride and thereafter oxidising an exposed surface. By vertically etching the oxide layer by means of reactive ion etching, an oxide abutment or bird-beak (24) is formed with a perpendicular wall (40) and sloping roof (42). By depositing an electrically conductive conformal layer (46) of thickness equal to a desired electrode length and then vertically etching this conductive layer, an electrode (16) of short length is left on the perpendicular wall (40) of the abutment or bird-beak (24). … Source and drain regions (12 and 14) are formed by ion implantation adjacent the abutment or bird-beak (24) joined by a charge conduction channel (50) which is partially constricted due to the doping profile produced by the varying thickness of the oxide layer to establish a predetermined resistance and protection from avalanche breakdown.
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公开(公告)号:CA1232370A
公开(公告)日:1988-02-02
申请号:CA502704
申请日:1986-02-25
Applicant: IBM
Inventor: FANG FRANK F , GROSSMAN BERTRAND M
IPC: H01L29/78 , H01L21/033 , H01L21/28 , H01L21/336 , H01L21/8236 , H01L29/41 , H01L29/423 , H01L21/38
Abstract: CONSTRUCTION OF SHORT-LENGTH ELECTRODE IN SEMICONDUCTOR DEVICE A construction process employs an insulating abutment which serves as a guide in the formation of a shortlength electrode in the fabrication of a semiconductor device. The process is particularly useful in construction of extremely short channel asymmetric lightly doped drain (LDD) silicon FET's in which case a bird beak is formed on the surface of a silicon wafer. The bird beak is composed of silicon dioxide produced by oxidation of the silicon substrate with the aid of an oxidation resistant covering of silicon nitride, the edge of which defines the location of the abutment. Reactive ion etching is employed to remove excess silicon dioxide leaving a vertical wall at one side of the abutment. Thereafter, the silicon nitride layer is stripped off leaving a slanting roof to the abutment. A doped polysilicon layer is deposited conformally on the surface of the substrate and on the abutment to a depth equal to the desired length of the electrode, in this case the desired length of the FET gate. Further reactive ion etching removes all of the polysilicon except for the portion thereof appended to the vertical wall of the abutment. Thereafter, ion implantation establishes a drain region at the side of the abutment having the slanting roof and a source region at the side of the abutment facing the vertical wall. The profile of the ion implantation follows the profile of the abutment enabling the stopping properties of the abutment to constrict the amount of charge implanted in the drain side of the channel thereby to establish a desired resistance and protection from avalanche breakdown.
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