公开(公告)号：DE69018499D1

公开(公告)日：1995-05-18

申请号：DE69018499

申请日：1990-01-19

Applicant: IBM

Inventor： HABITZ PETER-ANTON ,  HSIEH CHANG-MING ,  HUANG YI-SHIOU

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/761 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/08 ,  H01L29/10

Abstract: A process of forming a lateral PNP transistor that includes the steps of: providing a chip of semicon-ductor material including an isolated N- device region (14) over a P substrate (16), with an N-epitaxial layer (20), a N+ buried subcollector (18), and a reach-through region (26); implanting N dopant material at a relatively low power and low dosage into a selected implant region (32), of the device region; implanting N dopant material at a relatively higher power and higher dosage into the implant region to form emitter and collector regions (34,36) in the device region such that an intrinsic base region (38), is defined there-between.

公开(公告)号：DE69018499T2

公开(公告)日：1995-11-09

申请号：DE69018499

申请日：1990-01-19

Applicant: IBM

Inventor： HABITZ PETER-ANTON ,  HSIEH CHANG-MING ,  HUANG YI-SHIOU

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/761 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/08 ,  H01L29/10

Abstract: A process of forming a lateral PNP transistor that includes the steps of: providing a chip of semicon-ductor material including an isolated N- device region (14) over a P substrate (16), with an N-epitaxial layer (20), a N+ buried subcollector (18), and a reach-through region (26); implanting N dopant material at a relatively low power and low dosage into a selected implant region (32), of the device region; implanting N dopant material at a relatively higher power and higher dosage into the implant region to form emitter and collector regions (34,36) in the device region such that an intrinsic base region (38), is defined there-between.