公开(公告)号：DE3477271D1

公开(公告)日：1989-04-20

申请号：DE3477271

申请日：1984-12-28

Applicant: IBM

Inventor： HARDER CHRISTOPH STEPHAN DR ,  STOLL ERICH PAUL DR ,  POHL WOLFGANG DIETER DR

IPC: G02B6/00 ,  G01Q60/22 ,  G02B6/04 ,  G02B6/42 ,  G02B21/00 ,  G02B21/02 ,  G02B21/06

Abstract: The waveguide comprises a transparent body (13) having a very sharp point at one end and being coated with a first opaque layer (14) such as metal. Said opaque layer (14) carries a layer (15) of an optically transparent material which, in turn, is covered by a second opaque layer (16). The apex of the point is removed so as to expose said transparent body (13) in a first aperture (18) and to expose said transparent layer (15) in a second aperture 17, said first aperture occupying an area below 0,01µm 2 .Light entering the transparent body (13) from its remote end is shone onto an object (4), the reflected light enters said second aperture (17) and is guided to a light detector (19) for further processing.

公开(公告)号：DE68909408T2

公开(公告)日：1994-04-21

申请号：DE68909408

申请日：1989-07-27

Applicant: IBM

Inventor： BUCHMANN PETER LEO DR ,  HARDER CHRISTOPH STEPHAN DR ,  VOEGELI OTTO DR

IPC: H01S5/00 ,  H01L33/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/14 ,  H01S3/025

Abstract: Integrated semiconductor structure with optically coupled laser diode (11) and photodiode (12A), both devices having etched, vertical facets (16A, 21). The photodiode has a spatially non-uniform sensitivity profile with respect to the incident light beam (18A) emitted by the laser. This is due to the varying distance from the laser facet and/or to variations in the angle of incidence and results in photocurrents produced by the photodiode that depend on the intensity distribution of the light beam. The spatially non-uniform sensitivity profile allows the measurement of the far-field intensity distribution of the laser and thus on-wafer screening of lasers with respect to their mode-stability.

公开(公告)号：DE68909408D1

公开(公告)日：1993-10-28

申请号：DE68909408

申请日：1989-07-27

Applicant: IBM

Inventor： BUCHMANN PETER LEO DR ,  HARDER CHRISTOPH STEPHAN DR ,  VOEGELI OTTO DR

IPC: H01S5/00 ,  H01L33/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/14 ,  H01S3/025

Abstract: Integrated semiconductor structure with optically coupled laser diode (11) and photodiode (12A), both devices having etched, vertical facets (16A, 21). The photodiode has a spatially non-uniform sensitivity profile with respect to the incident light beam (18A) emitted by the laser. This is due to the varying distance from the laser facet and/or to variations in the angle of incidence and results in photocurrents produced by the photodiode that depend on the intensity distribution of the light beam. The spatially non-uniform sensitivity profile allows the measurement of the far-field intensity distribution of the laser and thus on-wafer screening of lasers with respect to their mode-stability.