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Patent Agency Ranking
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公开(公告)号：DE68909779T2
公开(公告)日：1994-05-05
申请号：DE68909779
申请日：1989-06-16
Applicant: IBM
Inventor： BUCHMANN PETER LEO DR , VETTIGER PETER , VOEGELI OTTO DR , WEBB DAVID JOHN DR
IPC: H01L21/302 , G02B6/122 , H01L21/3065 , H01L27/15 , H01S5/00 , H01S5/02 , H01S5/028 , H01S5/16 , H01S5/22 , H01S3/025 , H01S3/085 , H01S3/19 , G02B6/12
Abstract: A method, and devices produced therewith, for improving the flatness of etched mirror facets (18) of integrated optic structures with non-planar stripe waveguides (17) such as ridge or groove diode lasers or passive devices like modulators and switches. The curvature in the mirror facet surface, occurring at the edges of the waveguide due to topographical, lithographical and etch process effects, that causes detrimental phase distortions, is avoided by widening the waveguide end (23) near the mirror surface (18) thereby shifting the curved facet regions away from the light mode region (24) to surface regions (29) where curvature is not critical.
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公开(公告)号：DE68909779D1
公开(公告)日：1993-11-11
申请号：DE68909779
申请日：1989-06-16
Applicant: IBM
Inventor： BUCHMANN PETER LEO DR , VETTIGER PETER , VOEGELI OTTO DR , WEBB DAVID JOHN DR
IPC: H01L21/302 , G02B6/122 , H01L21/3065 , H01L27/15 , H01S5/00 , H01S5/02 , H01S5/028 , H01S5/16 , H01S5/22 , H01S3/025 , H01S3/085 , H01S3/19 , G02B6/12
Abstract: A method, and devices produced therewith, for improving the flatness of etched mirror facets (18) of integrated optic structures with non-planar stripe waveguides (17) such as ridge or groove diode lasers or passive devices like modulators and switches. The curvature in the mirror facet surface, occurring at the edges of the waveguide due to topographical, lithographical and etch process effects, that causes detrimental phase distortions, is avoided by widening the waveguide end (23) near the mirror surface (18) thereby shifting the curved facet regions away from the light mode region (24) to surface regions (29) where curvature is not critical.
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公开(公告)号：DE68909408T2
公开(公告)日：1994-04-21
申请号：DE68909408
申请日：1989-07-27
Applicant: IBM
Inventor： BUCHMANN PETER LEO DR , HARDER CHRISTOPH STEPHAN DR , VOEGELI OTTO DR
Abstract: Integrated semiconductor structure with optically coupled laser diode (11) and photodiode (12A), both devices having etched, vertical facets (16A, 21). The photodiode has a spatially non-uniform sensitivity profile with respect to the incident light beam (18A) emitted by the laser. This is due to the varying distance from the laser facet and/or to variations in the angle of incidence and results in photocurrents produced by the photodiode that depend on the intensity distribution of the light beam. The spatially non-uniform sensitivity profile allows the measurement of the far-field intensity distribution of the laser and thus on-wafer screening of lasers with respect to their mode-stability.
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公开(公告)号：DE68909408D1
公开(公告)日：1993-10-28
申请号：DE68909408
申请日：1989-07-27
Applicant: IBM
Inventor： BUCHMANN PETER LEO DR , HARDER CHRISTOPH STEPHAN DR , VOEGELI OTTO DR
Abstract: Integrated semiconductor structure with optically coupled laser diode (11) and photodiode (12A), both devices having etched, vertical facets (16A, 21). The photodiode has a spatially non-uniform sensitivity profile with respect to the incident light beam (18A) emitted by the laser. This is due to the varying distance from the laser facet and/or to variations in the angle of incidence and results in photocurrents produced by the photodiode that depend on the intensity distribution of the light beam. The spatially non-uniform sensitivity profile allows the measurement of the far-field intensity distribution of the laser and thus on-wafer screening of lasers with respect to their mode-stability.
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