IMPROVEMENTS IN METHODS OF PRODUCING SILICON SEMICONDUCTOR DEVICES

    公开(公告)号:GB1235784A

    公开(公告)日:1971-06-16

    申请号:GB2276069

    申请日:1969-05-05

    Applicant: IBM

    Abstract: 1,235,784. Silicon. INTERNATIONAL BUSINESS MACHINES CORP. 5 May, 1969 [9 May, 1968], No. 22760/69. Heading C1A. [Also in Division C7] In the epitaxial deposition of silicon on a heated substrate by the pyrolytic decomposition of a gaseous vapour phase, the source of silicon is mono-iodo silane, SH 3 I. The gaseous or vapour phase may contain doping agents.

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