公开(公告)号：EP2545586A4

公开(公告)日：2016-03-30

申请号：EP11753755

申请日：2011-02-04

Applicant: IBM

Inventor： GUO DECHAO ,  HEN SHU-JEN ,  LIN CHUNG-HSUN ,  SU NING

IPC: H01L27/06 ,  H01L29/16

CPC classification number: H01L27/0688 ,  H01L29/1606 ,  Y10S977/755

公开(公告)号：CA2787094A1

公开(公告)日：2011-09-15

申请号：CA2787094

申请日：2011-02-04

Applicant: IBM

Inventor： GUO DECHAO ,  HEN SHU-JEN ,  LIN CHUNG-HSUN ,  SU NING

IPC: H01L21/77 ,  H01L29/06 ,  H01L29/16

Abstract: A three-dimensional (3D) integrated circuit (IC) structure includes a first layer of graphene formed over a substrate; a first level of one or more active devices formed using the first layer of graphene; an insulating layer formed over the first level of one or more active devices; a second layer of graphene formed over the insulating layer; and a second level of one or more active devices formed using the second layer of graphene, the second level of one or more active devices electrically interconnected with the first level of one or more active devices.