公开(公告)号：DE1639262A1

公开(公告)日：1971-02-04

申请号：DE1639262

申请日：1968-01-05

Applicant: IBM

Inventor： PHILIP CASTRUCCI PAUL ,  HENRY COLLINS ROBERT ,  GEORGE SHEPHEARD ROBERT

IPC: H01L21/00 ,  H01L21/60 ,  H01L23/485 ,  H01L3/00

Abstract: 1,193,532. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 8 Jan., 1968 [13 Jan., 1967], No. 1001/68. Heading H1K. [Also in Division C7] Electrical contact is made to a semi-conductor region with an impurity concentration of at least 1018 atoms cm. -3 by depositing first a film of chromium, aluminium or titanium and then a film of nickel, silver, copper or copper chromium alloy. In one embodiment an antimony-doped N+type silicon wafer carrying an epitaxial N type layer is first provided with a silicon oxide coating by heating in dry oxygen and then in steam, or by R.F. sputtering, or with a layer of silicon nitride or alumina. Base and emitter regions are then formed by successive diffusions of boron and phosphorus into the N layer using standard planar techniques, the second diffusion doping the emitter and collector contact region with 5 Î 10 20 atoms/c.c. of phosphorus. Aluminium base and emitter contacts are next provided by vapour deposition overall followed by form-etching and sintering. Glass is subsequently deposited over the contacted face of the wafer in two stages of R.F. sputtering each followed by a firing stage. The wafer is then inverted in an evacuated vapour deposition chamber and its back collector contact face coated with successive layers of chromium, copper and gold of specified thickness while the wafer is held at 200-250‹ C. Holes are next etched through the glass layer to expose the aluminium contacts upon which similar layers of Cr, Cu and Au are then deposited through masks followed by layers of lead-tin solder by means of which nickel-plated copper balls are attached to the contacts. Finally the completed elements are attached to silver palladium lands on an alumina mounting plate and the ball contacts connected via nickel-plated copper strips to adjacent lands using lead-tin solder. In alternative planar diode and transistor embodiments the outer layer of gold is omitted.

公开(公告)号：DE1915084A1

公开(公告)日：1970-04-02

申请号：DE1915084

申请日：1969-03-25

Applicant: IBM

Inventor： HENRY COLLINS ROBERT ,  THOMAS DEVERSE FRANK

IPC: C08L7/00 ,  C08K5/04 ,  C08L21/00 ,  G03F7/008 ,  G03F7/038 ,  H01L21/027 ,  H01L23/29 ,  H01L19/00

Abstract: 1,256,756. Photographic materials. INTERNATIONAL BUSINESS MACHINES CORP. June 6, 1969 [June 17, 1968], No.28637/69. Heading G2C. [Also in Division B6] A photo-sensitive material comprises a synthetic or natural isoprene rubber containing photo-resist and a plasticizer which is an ester of molecular weight less than 500. Specified plasticizers are mono- or dialkyl or -alkyl phthalates, maleates or adipates. The specified sensitizer for the resist is an azide. The materials are used to produce semi-conductors using an oxide coated silica wafer as support or are used to produce printing plates.

公开(公告)号：DE1952626A1

公开(公告)日：1970-04-30

申请号：DE1952626

申请日：1969-10-18

Applicant: IBM

Inventor： HENRY COLLINS ROBERT ,  SKINNER LOGAN JOSEPH

IPC: C23C14/10 ,  H01J37/34 ,  H01L23/29 ,  H01L7/00

Abstract: 1,273,197. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 10 Oct., 1969 [25 Oct., 1968], No. 49762/69. Heading H1K. [Also in Division C7] A method of applying a surface coating of dielectric material to a semi-conductor device comprises R.F. sputtering the dielectric material, such as silicon dioxide, on to the surface of the device, which has previously been coated with a layer of phosphosilicate glass, using such a target purity and power density and substrate temperature that the charge on the surface of the device is maintained during deposition at less than 5 x 10 12 electronic charges per square centimetre. The thickness of the phosphosilicate glass layer is in the range 650-3000 Š, the target positive impurity ion density is less than 1 x 10 18 ions per c.c. and the R.F. power density is between 10 and 25 watts/square inch, the semi-conductor surface being maintained below 250‹ C. during deposition. The dielectric layer is applied in a conventional R.F. sputtering apparatus by sputtering in the floating mode wherein the substrate is electrically isolated from the anode by a quartz spacer. The phosphosilicate glass is applied by the open-tube diffusion method.

公开(公告)号：DE1915085A1

公开(公告)日：1970-03-05

申请号：DE1915085

申请日：1969-03-25

Applicant: IBM

Inventor： HENRY COLLINS ROBERT ,  THOMAS DEVERSE FRANK

IPC: G03F7/075 ,  H01L21/312 ,  H01L29/00 ,  C09J3/00

Abstract: 1,262,513. Improvements in photo-resist adhesion. INTERNATIONAL BUSINESS MACHINES CORP. June 23, 1969 [July 2, 1968], No.31561/69. Heading G2C. A coating of photo-resist material is applied to an oxide surface with a hexa-alkyldisilazane containing adhesive. The surface may be a silicon oxide surface, and the hexa-alkyldisilazane may be hexamethyl- or hexaethyldisilazane. The photoresist material preferably contains polyvinyl annaniate, polyisoprene, natural rubber resin, formaldehyde novolak, cinnamylidene or polyacrylic ester, and may be a partially cyclized polymer of cis-1, 4-isoprene having an average molecular weight of 60 000 to 70 000 and an azide photoinitiator. The oxide surface may be precoated with the adhesive and the photo-resist material applied to the adhesive, or the adhesive may be admixed with the photo-resist material and the admixture applied to the oxide surface. The invention is described principally in terms of preparing semi-conductor devices, but has general applicability to any process which requires application of a photo-resist to an oxide surface. This invention prevents the tendency of the exposed and developed photo-resist coating to curl away from the substrate.