公开(公告)号：US3876883A

公开(公告)日：1975-04-08

申请号：US42943873

申请日：1973-12-28

Applicant: IBM

Inventor： BROERS ALEC NIGEL ,  HERITAGE MARCUS BARRY

IPC: H01J37/147 ,  H01J37/21 ,  H01J37/30 ,  H01J37/00

CPC classification number: H01J37/3005 ,  H01J37/1471 ,  H01J37/21

Abstract: A method and system for improved focusing and registration in an electron beam device including an electron beam source, condenser lenses, deflection coils, projection lenses, a mask and a target. The deflection coils are located between second and final condenser lenses and deflect the focused electron beam onto a projection mark on the mask and onto a similar registration mark on the target to provide superimposed images for registration purposes.

公开(公告)号：DE2357232A1

公开(公告)日：1974-06-20

申请号：DE2357232

申请日：1973-11-16

Applicant: IBM

Inventor： HERITAGE MARCUS BARRY ,  WARDLY GEORGE ALFRED

IPC: H01J37/04 ,  H01J37/147 ,  H01J37/304 ,  H01J37/305 ,  H01L21/027 ,  H01J37/24 ,  H01L7/64

Abstract: The present invention relates to circuit means for use in combination with an electron beam projection system of the type wherein an image is projected onto a wafer by means of a scanning electron beam. The circuit means is employed to provide a regulated scan rate. In the system either the secondary electron current from the wafer or the wafer current itself is used to drive a pre-amplifier, the output of which is sent to a pair of attenuator networks to provide scan control. The outputs of the attenuators are fed to a pair of integrating amplifiers, the outputs of which are used to drive a pair of deflection amplifiers after passing through a pair of scan limit detectors and flyback circuits. The outputs of the deflection amplifiers are used to drive the X and Y deflection coils located before the final condenser lens.

公开(公告)号：DE2727733A1

公开(公告)日：1978-01-05

申请号：DE2727733

申请日：1977-06-21

Applicant: IBM

Inventor： HERITAGE MARCUS BARRY

IPC: H01L21/027 ,  H01J37/30 ,  H01J37/304 ,  H01J37/317

Abstract: ELECTRON PROJECTION MICROFABRICATION SYSTEM An electron beam image of a microcircuit pattern is projected from an irradiated photocathode window to a resist-coated silicon wafer through two successive lens systems having fieldcontaining regions which communicate through a small aperture in a common pole structure that otherwise shields these regions from each other. The lens region in which the photocathode is located contains electrostatic and magnetic fields for accelerating the electrons and focusing the beam toward a crossover point in the aperture. The region in which the wafer is positioned contains only a magnetic field to correct aberrations of the beam image. The arrangement permits reduction of the image size. Beam registration detectors and deflecting devices are located near the aperture in the common pole structure. Because it is isolated from objects located outside of its own lens region, the electrostatic field is not perturbed by these detecting and deflecting devices or by variations in flatness of the wafer surface. Backscattered electrons emitted from the wafer cannot be driven by the electrostatic field onto parts of the wafer surface where no exposure to electron rays is desired. The photocathode is protected from exposure to contaminants emitted by the wafer coating due to the restricted opening between the lens regions.

公开(公告)号：DE2332091A1

公开(公告)日：1974-01-03

申请号：DE2332091

申请日：1973-07-23

Applicant: IBM

Inventor： BROERS ALEC NIGEL ,  HERITAGE MARCUS BARRY

IPC: H01J37/147 ,  H01J37/21 ,  H01J37/30 ,  H01J3/32

Abstract: 1416077 Electron-beam apparatus INTERNATIONAL BUSINESS MACHINES CORP 28 March 1973 [30 June 1972] 14834/73 Heading H1D In electron beam apparatus in which an electron beam is scanned by deflection coils 34, 36 over a projection mask 40 on to a workpiece 48-e.g. a semiconductor wafer for microcircuit fabrication-accurate registration of the mask 40 and the workpiece is ensured by a preliminary operation in which the beam is scanned only over a first registration mark formed in the mask 40 and thereafter impacts a second registration mark formed in the workpiece 48, and the system is adjusted to produce superimposition of the first mark on the second mark (Fig. 2, not shown). Superimposition is observed by collecting back-scattered electrons from the workpiece and displaying the resulting signal on a video display 52 which is scanned in synchronism with the coils 34, 36.