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1.Schottky-barrier diode formed by sputter-deposition processes 失效
Title translation: 通过溅射沉积法形成的肖特基二极管二极管公开(公告)号:US3451912A
公开(公告)日:1969-06-24
申请号:US3451912D
申请日:1966-07-15
Applicant: IBM
Inventor: HEURLE FRANCOIS M D , ESAKI LEO , SEKI HAJIME
CPC classification number: H01L21/00 , C23C14/165 , H01L29/00
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2.
公开(公告)号:CA906678A
公开(公告)日:1972-08-01
申请号:CA906678D
Applicant: IBM
Inventor: HEURLE FRANCOIS M D , CHAUDHARI PRAVEEN , GANGULEE AMITAVA
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公开(公告)号:CA831693A
公开(公告)日:1970-01-06
申请号:CA831693D
Applicant: IBM
Inventor: ESAKI LEO , HEURLE FRANCOIS M D , SEKI HAJIME
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