公开(公告)号：DE3682745D1

公开(公告)日：1992-01-16

申请号：DE3682745

申请日：1986-09-19

Applicant: IBM

Inventor： GROBMAN WARREN DAVID ,  HO FAHFU ,  HURST JR ,  TOMKIEWICZ YAFFA

IPC: H05K3/08 ,  C23F4/00 ,  C23F4/02 ,  B23K26/18 ,  H01L21/31

Abstract: A process for radiation induced dry etching a metallised (e.g. copper) substrate is disclosed wherein the substrate is exposed to a patterned beam of laser radiation in a halogen gas atmosphere which is reactive with the substrate to form a metal halide salt reaction product to accelerate the formation of the metal halide salt without its substantial removal from the substrate. The metal halide salt is removed from the substrate by contact of the substrate with a solvent for the metal halide salt.