公开(公告)号：DE3265191D1

公开(公告)日：1985-09-12

申请号：DE3265191

申请日：1982-04-21

Applicant: IBM

Inventor： GROBMAN WARREN DAVID ,  NELSON DAVID ALBERT ,  WARLAUMONT JOHN MICHAEL

IPC: G01B11/00 ,  G02B5/18 ,  G03F9/00 ,  G05D3/12 ,  H01L21/027 ,  H01L21/30 ,  G03B41/00

Abstract: Fine alignment of mask and wafer, using Fresnel zone plates is achieved. Light is focused on the wafer by a zone plate in the mask. Light diffracted from a zone plate on the wafer is received by a sensor. The received light is coded (analog or digital) to indicate alignment. For analog coding the wafer zone plate diffracts light to the sensor from an area of the wafer zone plate which is indicative of alignment. For digital coding, the wafer zone plate is digitally encoded as a function of alignment to similarly code the diffracted light. To eliminate ambiguity, the mask zone plate is formed from a plurality of "elements", each of which is itself a Fresnel zone plate. The focal length of the elemental Fresnel zone plate can be related to the mask/wafer separation distance, whereas the focal length of the macro zone plate (made up of a plurality of the elemental zone plates) is related to the distance between mask and light sensor.

公开(公告)号：DE3682745D1

公开(公告)日：1992-01-16

申请号：DE3682745

申请日：1986-09-19

Applicant: IBM

Inventor： GROBMAN WARREN DAVID ,  HO FAHFU ,  HURST JR ,  TOMKIEWICZ YAFFA

IPC: H05K3/08 ,  C23F4/00 ,  C23F4/02 ,  B23K26/18 ,  H01L21/31

Abstract: A process for radiation induced dry etching a metallised (e.g. copper) substrate is disclosed wherein the substrate is exposed to a patterned beam of laser radiation in a halogen gas atmosphere which is reactive with the substrate to form a metal halide salt reaction product to accelerate the formation of the metal halide salt without its substantial removal from the substrate. The metal halide salt is removed from the substrate by contact of the substrate with a solvent for the metal halide salt.

公开(公告)号：DE3269882D1

公开(公告)日：1986-04-17

申请号：DE3269882

申请日：1982-11-05

Applicant: IBM

Inventor： GROBMAN WARREN DAVID

IPC: H01L21/66 ,  G01N23/18 ,  G01N23/203 ,  G03F1/40 ,  G03F1/86 ,  H01L21/027 ,  G03F1/00 ,  G01N21/88 ,  G01N23/227

Abstract: In electron beam testing systems wherein high energy, 'high resolution electron beams 14 are used to test litho- tgraphic masks 16, a technique and apparatus is described for discharging electrons which are left on the surface of the mask. The materials used in these masks e.g. for substrate are such that induced photoconductivity and photoemissivity are extremely low and are incapable of providing sufficient eletron discharge. The electrons are discharged by using a thin, low work function (e.g. between 1 and 3eV) coating 20 which is applied over the entire mask surface, the coating 20 being transparent to the radiation which will later be incident upon the mask when it is used in a fabrication process. Due to induced photoemission in the thin coating layer, enough photoemitted electrons will be produced to balance the buildup of electrons from the electron beam, thereby discharging the surface of the mask. The electron beam is a high energy beam, having energies greater than about 5000 eV, and a resolution less than about 1 micrometer. Cesium telluride (CsTe) is a suitable coating material.

公开(公告)号：DE3275250D1

公开(公告)日：1987-02-26

申请号：DE3275250

申请日：1982-10-26

Applicant: IBM

Inventor： GROBMAN WARREN DAVID

IPC: G21K1/00 ,  G03F7/20 ,  G21K1/04 ,  G21K5/02 ,  G21K5/08 ,  H01L21/027 ,  H05G2/00

公开(公告)号：DE3270459D1

公开(公告)日：1986-05-15

申请号：DE3270459

申请日：1982-10-05

Applicant: IBM

Inventor： GROBMAN WARREN DAVID

IPC: A61B6/00 ,  G02B26/10 ,  G03F7/20 ,  G21K1/06 ,  G21K1/10 ,  G21K5/04 ,  H01L21/027 ,  G03B41/00