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    Method for alloying metals in the presence of reactive materials
    1.
    发明授权
    Method for alloying metals in the presence of reactive materials 失效
    在合成材料中合金金属的方法

    公开(公告)号：US3668025A

    公开(公告)日：1972-06-06

    申请号：US3668025D

    申请日：1971-05-06

    Applicant: IBM

    Inventor： BLUM JOSEPH M ,  HOEKSTRA JAN P

    IPC: H01L21/00 ,  H01L21/24 ,  H01L23/29 ,  H01L23/485 ,  H01L7/46

    CPC classification number: H01L23/293 ,  H01L21/00 ,  H01L21/24 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: THE INVENTION INVOLVES A PROCESS FOR ALLOYING A METAL SUCH AS ALUMINUM INTO A SEMICONDUCTOR SUCH AS GERMANIUM IN THE PRESENCE OF REACTIVE INSULATING MATERIAL SUCH AS SILICON DIOXIDE. A LAYER OF AN ORGANIC MATERIAL IS DEPOSITED ON THE SURFACE OF THE INSULATING MATERIAL PRIOR TO ALLOYING AND HEATED FOR A TIME AND TEMPERATURE SUFFICIENT TO LEAVE A RESIDUE OF THE ORGANIC MATERIAL AT THE SURFACE OF THE INSULATING MATERIAL. THE ORGANIC MATERIAL IS REMOVED BY SPRAYING WITH AN ORGANIC SOLVENT SUCH AS TRICHLORO-ETHYLENE WHILE THE MATERIALS ARE STILL HOT. ALLOYING OF THE METAL WITH THE SEMICONDUCTOR IS THEN CARRIED OUT AND ANY REACTION BETWEEN THE ALUMINUM AND THE SILICON DIOXIDE WHICH MIGHT BE EXPECTED TO OCCUR IS MINIMIZED.

    Method to establish the endpoint during the delineation of oxides on semiconductor surfaces and apparatus therefor
    2.
    发明授权
    Method to establish the endpoint during the delineation of oxides on semiconductor surfaces and apparatus therefor 失效
    在半导体表面氧化物分解期间建立端点的方法及其设备

    公开(公告)号：US3874959A

    公开(公告)日：1975-04-01

    申请号：US39966873

    申请日：1973-09-21

    Applicant: IBM

    Inventor： HOEKSTRA JAN P ,  DILL FREDERICK H

    IPC: H01L21/66 ,  H01L21/306 ,  H01L21/311 ,  B29C17/08

    CPC classification number: H01L21/31111

    Abstract: A semiconductor device having a dielectric coating on at least one surface is mounted in a special holder which will allow the etching solution to contact only one oxide coated surface of the semiconductor to etch the same according to a predetermined pattern. A first electrical lead is connected either directly or indirectly to the opposite surface of the semiconductor and a second electrical lead is connected to an electrode disposed in the etching solution. Both of these are connected to a meter or detector for sensing any current between the two leads through the semiconductor. A chopped d.c. light source is focused to provide a spot of light at at least one etching point so that upon removal of the dielectric, the pulsating light beam will generate an a.c. signal on the semiconductor which will be detected by the meter to signal the etching endpoint.

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