Abstract:
A semiconductor device having a dielectric coating on at least one surface is mounted in a special holder which will allow the etching solution to contact only one oxide coated surface of the semiconductor to etch the same according to a predetermined pattern. A first electrical lead is connected either directly or indirectly to the opposite surface of the semiconductor and a second electrical lead is connected to an electrode disposed in the etching solution. Both of these are connected to a meter or detector for sensing any current between the two leads through the semiconductor. A chopped d.c. light source is focused to provide a spot of light at at least one etching point so that upon removal of the dielectric, the pulsating light beam will generate an a.c. signal on the semiconductor which will be detected by the meter to signal the etching endpoint.
Abstract:
An automatic ellipsometer is disclosed which comprises a mechanical-optical, an electrical, and a digital (computer) component. The mechanical-optical component includes a light source, various polarizing elements (one of which spins continuously), necessary apertures, and a light detector. The electrical component includes a signal from the light detector, trigger pulses from an angular shaft encoder, and an analogdigital converter, and produces a string of digitized data in a form which can be read and analyzed by digital logical circuitry. The digital (computer) component comprises logic circuitry in sufficient quantity to store and execute a relatively simple data analysis program, there being suitably associated with the digital component, one or more print-out and/or display devices. To facilitate automation of ellipsometric operation, there is provided a sample alignment system which includes a spot-defining aperture in the incident light beam, a sample holder with capability for rotation about two perpendicular axes intersecting at the intersection of the axis of the light beam source and the axis of the detector, and a four-quadrant beam deviation detector located a convenient distance from the sample along the detector axis. In the operation of the system, the sample is properly oriented about two axes of rotation, and data in the form of light intensity transmitted through a continuously spinning analyzer in the reflected beam path is sampled at convenient angular intervals to provide data which is digitally coded, and the data then is numerically Fourier analyzed to enable extrapolated properties of the sample to be displayed or typed out. The entire sequence of operations, i.e., from sample insertion to type out or display is on the order of about 5-10 seconds.
Abstract:
PROBLEM TO BE SOLVED: To provide a CMP(chemical mechanical polish)-supported liftoff fine patterning which is used for a vacuum-deposited thin film for a micro electronic device and a nano-structure. SOLUTION: The micro electronic device is formed of a first film covering a substrate, a first polishing-resistant layer covering the first film, a second film covering the first polishing-resistant layer, and a junction which is generally vertical between the first and second films and where the first and second polishing-resistant layers contain diamond-like carbons. The first film contains an electrical resistance material, whereas the second film contains a low resistance, conductive material. The first film is an electric resistor realized as a magnetic reading sensor. The electrical resistance material reacts with a magnetic field at high sensitivity. The device includes a generally vertical junction and a dielectric film adjacent to the electrical resistance material. COPYRIGHT: (C)2004,JPO&NCIPI